Vishay Siliconix TrenchFET Gen III P-Channel MOSFETs

Vishay Siliconix TrenchFET? Gen III P-Channel MOSFETs feature the newest generation of p-channel silicon technology, enabling these devices to provide industry-best on-resistance specifications, such as 1.9 milliohms in the PowerPAK? SO-8. With on-resistance as low as half the level of the next best devices on the market, Vishay Siliconix TrenchFET Gen III P-Channel power MOSFETs provide lower conduction losses for higher efficiency and longer time between charges for battery-operated applications. These Vishay Siliconix devices offer a full range of package options, including the 1.6-mm by 1.6-mm PowerPAK? SC-75. The new 20V SiA433EDJ TrenchFET Gen III P-Channel MOSFET provides the lowest on-resistance ever achieved for a p-channel device in the compact 2-mm by 2-mm footprint area of the thermally enhanced PowerPAK SC-70. The SiA433EDJ is the only 20-V MOSFET with both a gate-source voltage of 12 V and an on-resistance rating at 1.8 V. This allows it to be used in applications that encounter higher gate-drive voltage variation due to surges, spikes, noise, or overvoltages, while providing safer designs in applications with smaller input voltages.

Vishay is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs and infrared optoelectronics components) and passive electronic components (resistors, inductors, and capacitors). These components are used in almost all types of electronic devices and devices in the industrial, power, automotive, computer, consumer, telecommunications, military, aerospace, and medical markets.

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