SiC MOSFETs operate from –40° to 200°C

The QJD1210006 and QJD1210007 silicon carbide (SiC) MOSFET modules operate at –40° to 200°C, beyond those possible with silicon IGBT-based modules. The modules are constructed in half-bridge configuration and feature 100 A of SiC MOSFET per switch with two switches per model. When compared to a silicon IGBT module of equal rating, the SiC MOSFET-based module has 38% lower conduction losses and 60% lower switching losses for a total power-loss reduction of 54% when operated at 20 kHz.

Both style MOSFETs feature all silicon carbide Schottky diodes for reverse recovery. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Applications include forklifts, off-road electric vehicles, and power supplies. (QJD1210006 sample pricing, $9,000 each; QJD1210007 sample pricing, $9,200 each — available now.)

Powerex was established on January 1, 1986. Powerex is the result of a combination of two pioneers in the power semiconductor industry -- the Power Semiconductor Divisions of General Electric Company and Westinghouse Electric Corporation. With the idea of advancement toward the future, Mitsubishi Electric Corporation established an equity position in Powerex. In 1994, Westinghouse sold its shares to General Electric and Mitsubishi Electric, which currently share equal ownership of Powerex. Powerex turns ideas into cost-effective products and is a leading supplier of discrete, modular and integrated high power semiconductor solutions, supporting many markets, including: AC, DC and Servo Drives (Low and Medium Voltage), Aircraft (Electro-Hydrostatic Actuators, Power Generators), Alternative Energy (Wind, Photovoltaic) and Distributed Power (Flywheel, Fuel Cell, Microturbine), Electric Vehicles, Induction Heating and Industrial Pump Controls. Powerex’s goal is to be “First in Quality” with the focus on TOTAL and CONSISTENT customer satisfaction....

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