ROHM New SCT3xxxxxHR series Automotive-Grade SIC MOSFET

In recent years, more and more car manufacturers have introduced electric vehicles. However, the problem of relatively short mileage of electric vehicles has become the biggest challenge for electric vehicle manufacturers. 

To improve the driving distance, a larger battery capacity and a shorter charging time are required. This requires high power and high efficiency onboard chargers such as 11kW and 22kW, which increases the adoption rate of SiC MOSFETs. In addition, higher voltage batteries (800V) require power devices with low loss and higher withstand voltage.

To meet these requirements, ROHM has added 10 new models to its AEC-Q101 compliant MOSFET family with trench gate structures. In the future, ROHM will strive to further improve quality and strengthen its product lineup to improve equipment performance, reduce power consumption and achieve greater miniaturization.

Next，Let's take a closer look at the Rohm New Automotive-Grade SIC MOSFET Series

The Key Features of the New Automotive-Grade Silicon Carbide MOSFETs

The new devices feature drain-source breakdown voltages of either 650 volts or 1200 volts.

The 650-volt units feature drain-source on-state resistances ranging from 17 milliohms to 120 milliohms, and drain currents ranging from 21 amps to 118 amps.

The Inner Circuit of all members of the SCT3xxxxxHR Series image

The members of the 650-volt breakdown voltage subset

SCT3017ALHR/SCT3022ALHR/SCT3060ALHR/SCT3080ALHR/SCT3120ALHR

The 1200-volt devices feature drain-source ON-state resistance (RDS on) ranging from 22 milliohms to 160 milliohms, and drain currents ranging from 17 amps to 95 amps.

The members of the 1200-volt breakdown voltage subset 

SCT3022KLHR/SCT3030KLHR/SCT3080KLHR/SCT3105KLHR/SCT3160KLHR

In addition to their low on-resistance, all series members feature fast switching speeds and fast reverse recovery. They are also easy to operate in parallel and are simple to drive.

All members of the SCT3xxxxxHR series feature PDs from 103 watts to 427 watts, an operating temperature range of -55ºC to +175ºC, and are available in TO-247 packages. The modules feature Pb-free lead plating and are RoHS compliant.

Beyond their effectiveness in automotive applications, members of the SCT3xxxxxHR series will find wide application for use in switch mode power supplies.

The Competing Devices with ROHM Automotive-Grade SIC MOSFET Series

The rapid introduction of EVs has elicited the interest of semiconductor manufacturers worldwide. It is a highly active field, and here are just three of the competing devices.

The SCTW100N65G2AG from STMicroelectronics is an automotive-grade silicon carbide power MOSFET. It features a drain-source breakdown voltage of 650 volts, drain current up to 100 amps, and a typical drain-source on state resistance of 20 milliohms and it comes in a HiP247 package. This device, too, is AEC-Q101 qualified.

The NVHL080N120SC1N from On Semiconductor is another AEC-Q101 qualified SiC MOSFET. The device, with a 1200-volt drain-source breakdown voltage, has a typical drain-source ON-state resistance of 80 milliohms and a maximum drain current of 20 amps.

The E3M0065090D from Wolfspeed is AEC-Q100 qualified and features a minimum 900 volt breakdown voltage and a 35 amp current rating. Maximum junction temperature is 150˚C and RDS on is rated at 65 milliohms.

Tag: ROHM SiC MOSFET

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