The Ultimate Guide to IRFZ44N MOSFET: Pinout, Uses & Datasheet

We unanimously acknowledge the evolution of transistors, witnessing advancements in both shape and specifications since their inception. Notable mentions are the BJT and MOSFET transistors, each representing modifications that have significantly enhanced technology over the years. In focus of this discussion is the IRFZ44N MOSFET.

Now, why this specific MOSFET? Similar to its counterparts, the IRFZ44N presents a diverse array of applications. Whether it's the regulation of motor speeds, adjustment of lighting intensity, or other scenarios, the IRFZ44N transistor stands out as a reliable choice. In this article, we will delve into the IRFZ44N MOSFET, explore its pinout, features, equivalents, uses, datasheet, and more details. everything you need to know about this powerful MOSFET transistor.

What is IRFZ44N?

The IRFZ44N is an N-channel MOSFET manufactured by Infineon Technologies. It features a robust 49A drain current capacity and a low Rds value of 17.5 mΩ, making it well-suited for switching circuits. With a low threshold voltage of 4V, it is commonly used with microcontrollers operating at 5V. However, for optimal drain current at its maximum, a threshold voltage capacity of up to 10V is required, necessitating a gate driver circuit for complete transistor switching.

Known for its capability to handle high voltage and current levels, the IRFZ44N is categorized as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with low output resistance and high input resistance. It can withstand a maximum voltage of 55 volts and a maximum current of 49 amperes.

The IRFZ44N is particularly suitable for applications that require high voltage and current switching, such as power supply and motor control circuits. Leveraging its low on-state resistance, it efficiently handles high currents with minimal energy consumption, gaining recognition for reliability and robustness in the electronics industry.

Ideal for low-power circuits that need to control substantial loads with a weak signal, the IRFZ44N features a low gate charge, enabling effective management with a weak external signal. Its applicability extends to high-frequency applications up to 1MHz, and it can withstand a broad temperature range (-55°C to +175°C). Often used in conjunction with microcontrollers like Arduino, the MOSFET N-channel or logic level IRLZ44N MOSFET serves various applications.

As a dependable electronic component, the IRFZ44N excels at handling high currents and voltages in circuits. Its low output impedance, high input impedance, and low on-state resistance contribute to its versatility, making it an optimal choice for applications ranging from power supplies to audio amplifiers, catering to both professional engineers and enthusiasts.

MOSFET Transistors

The MOSFET, a type of transistor employed as an amplifier or switch in electronic circuits, features three terminals and operates by adjusting the width of the semiconductor material channel between doped regions. The gate, the third terminal, regulates this width by the voltage applied to it.

There are two types of MOSFET transistors based on channel composition: n-channel MOSFET (NMOS) and p-channel MOSFET (PMOS). NMOS relies on an electron-dominated channel, while PMOS utilizes a hole-dominated channel. These transistors operate through the electric field created by gate voltage and charge carriers in the channel.

MOSFET transistors excel in high-frequency applications, thanks to their high input impedance, which minimizes current drawn from the input signal and reduces the impact on the signal source. They also boast low output impedance, enhancing efficiency in driving high loads and lowering power dissipation.

Their quick switching capabilities, allowing rapid transitions between on and off states, make MOSFET transistors ideal for applications requiring swift switching, including motor control circuits, power supplies, and audio amplifiers. Their compatibility with CMOS technology and compact size further position them as preferred components for integrated circuits.

In summary, MOSFET transistors, widely used in electronic circuits, offer versatility with properties such as high input impedance, fast switching speeds, and low output impedance. Operating based on the electric field generated by gate voltage and charge carriers, they find applications in motor control circuits, power supplies, audio amplifiers, and integrated circuits.

IRFZ44N Pinout

The IRFZ44N pinout comprises three terminals labeled Gate, Drain, and Source, represented by the letters G, D, and S, respectively.

Pin Configuration

Pin No.	Pin Name	Description
1	Gate	Controls the biasing of the MOSFET
2	Drain	Current flows in through Drain
3	Source	Current flows out through Source

Features & Specifications

• N-Channel MOSFET for Small Signals

• Continuous Drain Current (ID) is 49A at 25°C

• Pulsed Drain Current (ID-peak) is 160A

• Minimum Gate Threshold Voltage (VGS-th) is 2V

• Maximum Gate Threshold Voltage (VGS-th) is 4V

• Gate-Source Voltage (VGS) is ±20V (max)

• Maximum Drain-Source Voltage (VDS) is 55V

• The gate-source voltage, VGS, is at a maximum of ±20V.

• Another notable feature is the power dissipation, which is a maximum of 94W.

• Rise time and fall time are approximately 60ns and 45ns, respectively.

• It is commonly utilized with Arduino due to its low threshold current.

• Available in TO-220 package.

Electrical Characteristics

To effectively devise a circuit and guarantee the optimal performance of the IRFZ44N power MOSFET transistor, it is imperative to grasp its key electrical attributes. Here are the critical electrical specifications of the IRFZ44N:

• Drain-Source Voltage (Vds): The highest permissible voltage across the IRFZ44N's drain and source pins is 55 volts. Going beyond this limit could result in harm to the component.

• Drain Current (Id): The maximum drain current the IRFZ44N can withstand is 49 amps, contingent on ambient temperature and operational conditions.

• Gate-Source Voltage (Vgs): The maximum allowable voltage between the gate and source pins is +/- 20 volts. This voltage dictates the current flow between the source and drain pins.

• Gate Threshold Voltage (Vgs(th)): This signifies the minimum voltage required to activate the IRFZ44N, with a typical Vgs(th) value ranging from 2 to 4 volts.

• On-Resistance (Rds(on)): When fully activated, the resistance between the drain and source pins is denoted by Rds(on), typically measuring 17 milliohms for the IRFZ44N.

• Total Gate Charge (Qg): The aggregate charge essential for toggling the IRFZ44N on and off is represented by Qg, with a typical value of 44 nanocoulombs.

• Gate-Source Capacitance (Cgs): This refers to the capacitance between the gate and source pins, with a typical Cgs value of 2000 picofarads for the IRFZ44N.

Comprehending these electrical characteristics is paramount when fashioning a circuit with the IRFZ44N power MOSFET transistor. By taking these parameters into account, one can judiciously choose components, design the gate driver circuit, and guarantee the circuit operates within the safe confines of the component.

IRFZ44N Alternatives

IRF2807, IRFB3207, IRFB4710, IRF3205, IRLZ44N, STP55NF06L, and FDP7030L can be considered as alternatives to the popular IRFZ44N MOSFET.

• IRFZ48N: An enhanced iteration of the IRFZ44N, the IRFZ48N boasts a maximum drain current of 64 amps and a peak voltage rating of 60 volts. Notably, its on-resistance is lower than that of the IRFZ44N, rendering it an apt choice for applications demanding heightened power.

• IRFB3207: The IRFB3207 is a power MOSFET known for its high current-carrying capability and low on-state resistance. It can be considered an alternative to the IRFZ44N in applications requiring robust switching performance and efficient power handling. Both MOSFETs share similar characteristics, making the IRFB3207 a suitable substitute.

• IRFB4710: The IRFB4710 is another MOSFET alternative to the IRFZ44N. It features a high current rating and low conduction losses, making it suitable for applications where efficient power switching is essential. The IRFB4710 can be used in circuits requiring a MOSFET with performance characteristics comparable to the IRFZ44N.

• IRF3205: Positioned as a favored selection, the IRF3205 power MOSFET transistor can manage up to 55 volts and a maximum drain current of 110 amps. Its on-resistance is notably lower than that of the IRFZ44N, establishing it as an excellent choice for high-power applications.

• IRLZ44N: A variant of the IRFZ44N tailored for digital circuits and microcontrollers, the IRLZ44N obviates the need for an external gate driver circuit. Additionally, it exhibits lower resistance than the IRFZ44N and can accommodate a maximum voltage of 55 volts.

• STP55NF06L: Engineered by STMicroelectronics, this power MOSFET transistor boasts a maximum voltage tolerance of 60 volts and can handle a peak drain current of 50 amps. Its on-resistance is lower than that of the IRFZ44N, positioning it as a fitting choice for diverse power electronic applications.

• FDP7030L: Crafted by Fairchild Semiconductor, the FDP7030L excels in high-power scenarios, featuring a maximum voltage rating of 100 volts and a peak drain current of 60 amps. Notably, its on-resistance is lower than that of the IRFZ44N.

When seeking a substitute for the IRFZ44N power MOSFET transistor, exercise diligence in selecting alternatives that align with the voltage and current prerequisites, on-resistance, and gate capacitance of your application. Always refer to the datasheet of any alternative component to ensure seamless compatibility.

Where to Use IRFZ44N MOSFET?

The IRFZ44N is renowned for its elevated drain current and swift switching capabilities. Moreover, its diminished Rds value contributes to heightened efficiency in switching circuits. The MOSFET initiates activation with a modest 4V gate voltage, yet attains maximum drain current solely with a 10V gate voltage. When interfacing the MOSFET directly with a microcontroller, such as Arduino, consider opting for the logic level variant, IRLZ44N MOSFET.

How to Use IRFZ44N MOSFET?

In contrast to transistors, MOSFETs function as voltage-controlled devices. This implies that their state can be altered, transitioning between on and off states, by supplying the necessary Gate threshold voltage (VGS). The IRFZ44N, being an N-channel MOSFET, maintains an open circuit between its Drain and Source pins in the absence of a voltage applied to the gate pin. Activation occurs when a gate voltage is supplied, causing these pins to close.

When interfacing with an Arduino for switching purposes, a straightforward drive circuit utilizing a transistor proves effective in delivering the requisite gate voltage to initiate the full opening of the MOSFET. However, for diverse applications involving switching and amplification, the use of a dedicated MOSFET Driver IC becomes essential.

IRFZ44N with 5V gate (Arduino)

Should the MOSFET gate pin be directly linked to an I/O pin of a microcontroller, such as Arduino or PIC, it won't attain full openness. Instead, the maximum drain current will be contingent upon the voltage supplied to the gate pin. The accompanying graph illustrates the permissible drain current corresponding to gate threshold voltages ranging from 4V to 10V.

Observing the graph reveals that the MOSFET achieves complete openness only at approximately 10V gate voltage. In contrast, at around 5V, the drain current is confined to 20A, and so forth.

IRFZ44N Circuit (On-Off Switch)

In the realm of practical applications involving N-channel power MOSFETs, our focus shifts to constructing a touch-sensitive ON-OFF switch circuit. The indispensable components for this endeavor include:

• IRFZ44N transistor.

• 12V relay switch.

• 104F ceramic capacitor.

• 1N4007 diode.

The accompanying video provides comprehensive guidance on the step-by-step process of assembling the circuit, from inception to completion.

How to Safely run IRF44N for Long Hours in a Circuit？

The primary precautionary step is to refrain from operating the device at its maximum rated capacity.

Continuous operation at maximum levels carries the risk of eventual device failure. The strain imposed by consistently operating at the maximum rating can compromise the integrity of the circuitry, leading to a decline in performance over time.

A prudent approach is to adhere to utilizing no more than 80% of the maximum rated capacity. This entails excluding 20% from the full specifications while employing the component.

This principle applies equally to the IRFZ44 N-channel MOSFET transistor. For instance, if the MOSFET amplifier's maximum drain current rating is 49 amps, it is advisable to avoid applying a load exceeding 39 amps. Additionally, maintaining the transistor within the temperature range of -55°C to 175°C is recommended for optimal performance and longevity.

Circuit Designing

Creating a circuit with the IRFZ44N power MOSFET transistor involves a systematic approach. Here's a step-by-step guide:

• Define Circuit Requirements:

Gather details about load characteristics, input voltage, and output current.

This information aids in selecting suitable components that align with the circuit's needs.

• Component Selection:

Choose necessary components such as resistors, capacitors, diodes, etc., to fulfill the circuit requirements.

• IRFZ44N MOSFET Selection:

When opting for the IRFZ44N MOSFET transistor, verify its maximum current and voltage ratings against load specifications.

• Gate Voltage Calculation:

Determine the gate voltage required for toggling the IRFZ44N on and off by referring to the datasheet.

• Gate Driver Circuit Design:

Develop a gate driver circuit capable of supplying sufficient voltage and current for effective switching. Utilize an external driver IC or a transistor circuit for this purpose.

• Circuit Connection:

Refer to the circuit diagram to accurately connect components and the IRFZ44N MOSFET transistor. Ensure adherence to requirements.

• Circuit Testing:

Validate proper functionality through circuit testing. Employ a multimeter or oscilloscope to monitor voltage and current levels.

• Optimization:

Fine-tune the circuit for enhanced performance and efficiency. Adjust component values, gate voltage, and other pertinent parameters accordingly.

To design a circuit incorporating the IRFZ44N power MOSFET transistor, a meticulous approach involving assessment of circuit requirements, component selection, gate voltage calculation, gate driver circuit design, thorough testing, and optimization is crucial.

IRFZ44N Applications

• Switching high-power devices

• Motor speed control

• Design of LED dimmers or flashers

• High-speed switching applications

• Implementation in converters or inverter circuits

• Utilization in battery chargers

• Suitable for solar battery charging and operation

• Application in UPS (Uninterrupted Power Supply) devices

• Integration into motor driver circuits

• Beneficial for typical applications demanding fast switching.

Advantages of IRFZ44N

• Enhanced durability

• Readily accessible through distribution partners

• Meets industry standards for qualification

• Optimal performance in low-frequency applications

• Standardized pin-out facilitates seamless replacement

• Robust current-handling capability

What is the Difference between IRLZ44N and IRFZ44N MOSFET?

The IRLZ44N and IRFZ44N MOSFETs are frequently interchanged and misapplied due to their similar names. The IRLZ44N stands out as a logic-level MOSFET featuring an exceptionally low gate threshold voltage of 5V. This implies that the MOSFET can achieve full activation with a mere 5V applied to its gate pin, eliminating the necessity for a separate driver circuit.

IRLZ44N MOSFET

Conversely, the IRFZ44N demands the implementation of a gate driver circuit when complete MOSFET activation is required, especially when interfacing with a microcontroller such as Arduino. While it does exhibit partial activation with a direct 5V input from an I/O pin, the resulting drain current is subject to limitations.

Troubleshooting of IRFZ44N

If you encounter challenges with the IRFZ44N power MOSFET transistor in your circuit, there are systematic troubleshooting steps you can undertake.

• Verify Connections: Ensure all connections between the IRFZ44N and other circuit components are secure and accurate to prevent potential malfunctions. Loose or incorrect connections can lead to issues.

• Gate Voltage Inspection: Safely measure the gate voltage of the IRFZ44N using a multimeter and confirm it falls within the specified range outlined in the datasheet. Inadequate voltage may hinder proper activation while exceeding the permissible range can cause damage.

• Load Check: Avoid connecting a load that surpasses the maximum current or voltage ratings of the IRFZ44N to prevent potential damage or operational issues.

• Heat Sink Examination: Confirm the proper installation of the heat sink and ensure sufficient thermal conductivity between the IRFZ44N and the heat sink. This precaution helps prevent overheating and potential component failure.

• Identify Faulty Components: If the issue persists despite initial checks, scrutinize the circuit for other potentially faulty components. Replace any defective components and conduct another round of testing to validate circuit functionality.

Should the problem persist after following these initial steps, conduct a thorough assessment of your circuit to identify and replace any additional components that might be impeding optimal performance. Subsequent testing will confirm the success of the troubleshooting process.

IRFZ44N Package

IRFZ44N Datasheet

Download IRFZ44N Datasheet PDF.

Conclusion

The IRFZ44N power MOSFET transistor stands out as a versatile option for demanding applications in the realm of power electronics. Boasting impressive current and voltage ratings, coupled with low on-resistance and rapid switching capabilities, it has earned widespread acclaim among professionals seeking precise control over their electrical systems. To optimize performance when employing the IRFZ44N, adhere to recommended best practices: meticulously verify your connection methodologies, tailor your plans to meet appliance specifications, and attentively monitor gate voltages and load thresholds during operation. By doing so, you can harness peak efficiency from your device with minimal associated risk!

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