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Home > Technology List > High-Power GaN HEMTs serve C-Band applications.

High-Power GaN HEMTs serve C-Band applications.

Update Time: 2019-12-20 12:03:20

High-Power GaN HEMTs serve C-Band applications.

Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has introduced the industry's first GaN transistor for tropospheric scatter (troposcatter) communications applications rated for 200W continuous wave (CW) and 4.4—5.0GHz operation. The new CGHV50200F GaN high electron mobility transistor (HEMT) is also the industry's highest power transistor for C-Band applications, such as satellite communications.

The new 50 Ohm, internally matched 200W GaN HEMTs deliver high power, high efficiency, high gain, and wide bandwidth performance. Exhibiting 180W typical PSAT, 11.5dB typical power gain and 48% typical power efficiency, these transistors finally allow solid state power amplifiers (SSPAs) to effectively replace traveling wave tube (TWT) amplifiers in satellite broadcasting systems. Featuring a smaller, lighter footprint and a significantly longer lifespan than TWTs, GaN-enabled SSPAs can reduce overall system weight and mitigate both operational and replacement costs.

The new 200W CGHV50200F GaN HEMTs are supplied in a ceramic/metal flange package (type #440215) measuring 23.75—24.26mm (0.935—0.955") by 23.01mm (0.906") including the gain and drain or 17.25—17.55mm (0.679—0.691") without.

For more information about Cree's new 200W C-Band GaN HEMT, please visit to access product datasheets. To purchase parts or demonstration amplifier circuits, please visit Digi-Key or Mouser. For further information, please visit and the Cree RF YouTube video stream or contact Sarah Miller, Marketing, Cree RF Components, at or 919-407-5302.

Christine Stieglitz
PR Executive 
BtB Marketing Communications
900 Ridgefield Drive
Suite 270
Raleigh, NC 27609 

Cree® is a registered trademark of Cree, Inc.


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