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Home > Technology List > GaN HEMTs target L-Band radar systems

GaN HEMTs target L-Band radar systems

Update Time: 2019-12-20 23:45:45

GaN HEMTs target L-Band radar systems

Cree has released two new gallium nitride (GaN) high electron mobility transistors (HEMTs) for use in 1.2 GHz to 1.4GHz L-Band radar amplifier systems: the 250-W CGHV14250 and the 500-W CGHV14500. Featuring what is asserted to be the highest known L-Band efficiency performance at 85°C, high power gain performance, and wide bandwidth capabilities, the new transistors are designed to enhance the performance of band-specific applications ranging from UHF to 1800 MHz, including: tactical air navigation systems (TACAN), identification: friend or foe (IFF) systems, and other military telemetry systems. Based on the company’s 50-V 0.4μ GaN on SiC foundry process, these new GaN HEMTs for L-Band radar systems are positioned as providing engineers with excellent power and small signal performance, are internally pre-matched on the input, and are available in ceramic/metal flange and pill packages that are much smaller than competing gallium arsenide (GaA) or silicon (Si) RF technology, enabling enhanced design flexibility. The 250-W CGHV14250 features 330-W typical output power, 18-dB power gain, and 77 percent typical drain efficiency. The 500-W CGHV14500 features 500-W typical output power, 17 dB power gain, and 70 percent typical drain efficiency. Both the 250W and 500W GaN HEMTs feature 0.3dB pulsed amplitude droop. 

Cree RF Components, www.cree.com

Cree is the market's leading innovator and semiconductor manufacturer, increasing their value by significantly improving the energy efficiency of solid state lighting, power and communications products. Cree's market advantage lies in its unique material expertise in the field of GaN-based silicon carbide (SiC) and its use in the manufacture of chips and complete devices that can be used in very small spaces. It handles more power, while its materials and products generate less heat than other prior art. Cree's Energy Return Solution (ROETM) is used in a variety of applications, including a variety of exciting options, including brighter, more adjustable LEDs for general lighting and more vivid displays. Backlight, optimal power management for high current switching power supplies and variable speed motors, and more efficient wireless infrastructure for data and voice communications. Cree's customer base ranges from new lighting fixture manufacturers to federal agencies related to defense. Cree's product line includes blue and green LED chips, lighting LEDs, backlight LEDs, power switching devices, and broadcast/wireless devices.

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