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Home > Technology List > FETs designed to meet the requirements of X to Ku band low noise block

FETs designed to meet the requirements of X to Ku band low noise block downconverters for direct broadcast satellites

Update Time: 2019-12-20 02:28:05

FETs designed to meet the requirements of X to Ku band low noise block downconverters for direct broadcast satellites

Renesas Electronics and California Eastern Laboratories (CEL) introduce the NE3516S02 and NE3513M04 GaAs FETs which were specifically designed to meet the demanding requirements of X to Ku band low noise block (LNB) downconverters for direct broadcast satellites. These general purpose GaAs FETs are also well suited for general purpose X to Ku band wireless communications.

Key features
These new GaAs FETs offer improved Associated Gain and Noise Figure performance over previous generation devices.

Typical performance at 12GHz with bias 2V / 10mA:

NE3516S02:    NF = 0.35dB, Ga = 14dB  (typically used for 1st stage)

NE3513M04:  NF = 0.45dB, Ga = 13dB (typically used for 2nd stage)

Both devices maintain impressive NF and Ga at the lower bias of 2V / 6mA, as follows:

NE3516S02:    NF = 0.35dB, Ga = 13.5dB

NE3513M04:  NF = 0.50dB, Ga = 12dB

Pricing, packaging, and availability

Samples are available now at CEL.  Pricing is as follows:

NE3516S02:         $0.72 @ 100K pcs

NE3513M04:       $0.52 @ 100K pcs

For more information on this new series of NE3516S02 and NE3513M04 Small Signal GaAs FETs, please visit

www.cel.com/NE3516S02

www.cel.com/NE3513M04

CEL offers a broad selection of components and modules along with an IoT platform focused on lighting control systems.

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