A-Series IGBTs Designed to Match European Nameplate Ratings & Package Sizes

Description: Designed to match European nameplate ratings and package sizes while offering superior thermal performance, the Powerex A-Series IGBT uses the 5th Generation CSTBT, Carrier Stored Trench-Gate Bipolar Transistor, chip, which offers lower losses in comparison to previous chip generations.

Each Powerex IGBTMOD™ module consists of one IGBT transistor in a single configuration or two transistors in a half-bridge configuration with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. A-Series utilizes U-Series package technology, providing low inductance and low thermal impedance. 

Product Ratings and Characteristics 
Designed to match or exceed the performance of European rate modules while offering superior thermal performance, the A-Series IGBT is optimized for high current density and wide RBSOA to ensure reliability. These 1200V dual devices are rated from 100A to 600A and the single devices range from 400A to 600A. 

Applications 
A-Series IGBT was developed for use in motor drives, UPS, welders, servo drives, fuel cell inverters and MRI power supplies. 

Call Powerex at 1-800-451-1415 to locate your nearest sales office.

he Powerex IGBT/HVIGBT line-up includes both Mitsubishi devices as well as Powerex self-manufactured devices. Mitsubishi IGBTs employ their CSTBT (Carrier Stored Trench-Gate Bipolar Transistor) technology, supporting the reduced power loss and miniaturization required for industrial applications. Complementing Mitsubishi’s line-up, Powerex HVIGBTs and HV diodes, feature highly insulating housings that offer enhanced protection by means of greater creepage and strike clearance distance for many demanding applications like medium voltage drives and auxiliary traction applications.

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