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Home > Technology List > Western Digital Releases 96-Layer 3D NAND_ iNAND MC EU321 EFD

Western Digital Releases 96-Layer 3D NAND_ iNAND MC EU321 EFD

Published time: 2018-10-13

SAN JOSE, Calif.--(BUSINESS WIRE)--Western Digital Corp. (NASDAQ: WDC) Releases Industry’s First 96-Layer 3D NAND UFS 2.1 Embedded Flash Drive for High-End Smartphones, the Western Digital iNAND® MC EU321, accelerating the possibilities of artificial intelligence (AI), augmented reality (AR), multi-camera high-resolution photography, 4K video capture and other demanding applications for high-end mobile and compute devices.


The flash memory capacity is 32GB, 64GB, 128GB, 256GB, based on Western Digital's own master control, the interface supports UFS 2.1 Gear3, two channels, support Western Digital's own iNAND SmartSLC 5.1 cache technology, the performance of the nominal continuous read and write can be up to 800MB / s, 500MB/s, random read and write can reach 50,000 IOPS, 52000 IOPS.

It is packaged in a BGA package and measures only 11.5 x 13 x 1 mm. It can be easily placed in today's smartphones and tablets, and its capacity is sufficient for notebooks, VR heads and other devices.

Western Digital began shipping 96-layer stacked 3D flash memory from April this year, and released its first SSD based on it in July. This is the first time that it has entered the embedded field.

What is the Features

.UFS 2.1 Gear3 2-Lane
.iNAND® SmartSLC 5.1 technology
.Plug-and-Play integration
.Field Firmware Upgrade (FFU)
.Multiple RPMB regions
.Secure Write Protection
.Health and diagnostic reporting
.Production State Awareness

Design
.Industry-leading 96-Layer 3D NAND
.Full vertical integration: UFS controller, 3D NAND technology,firmware, assembly and test, designed and developed by Western Digital.
.UFS 2.1 coupled with 96-Layer 3D NAND technology delivers an energy-efficient storage solution, superior sequential write speeds and high capacities for mobile devices.
.Capacities from 32GB to 256GB in a small form factor allow for scalability and design flexibility.

Performance
1.iNAND® SmartSLC 5.1 technology provides an exceptional user experience by maintaining high SLC (Single Level Cell) performance as the device approaches its maximum storage capacity by utilizing the SLC buffer to clean up fragmented data during idle time between bursts.

2.Leading sequential write performance with a 10% improvement over prior generation utilizing iNAND®SmartSLC 5.1 technology optimized for high-resolution photography, fast file transfer and content download.

Related article suggestion:3D NAND and How the Data Explosion Defines the Future

SOURCE:https://blog.westerndigital.com/3d-nand-technology-defines-the-future/

 

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