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Home > Technology List > SiC MOSFETs LSIC1MO170E1000 from Littelfuse can be operatrd at all tem

SiC MOSFETs LSIC1MO170E1000 from Littelfuse can be operatrd at all temperatures

Published time: 2018-09-27

NEWEST PRESS RELEASE ABOUT SIC MOSFETS LSIC1MO170E1000

CHICAGO, September 24, 2018 — Littelfuse, Inc.released its first 1700V SiC MOSFET, the LSIC1MO170E1000, expanding its portfolio of SiC MOSFET devices.

An important addition to the Littelfuse SiC MOSFET product offering, the LSIC1MO170E1000 is a powerful addition to the company’s 1200V SiC MOSFETS and Schottky diodes already released. 

End-users will benefit from more compact, energy-efficient systems and also from a potential lower total cost of ownership.

What is the benefits of LSIC1MO170E1000

High-efficiency benefits powered by SiC MOSFET technologies offer multiple advantages to many demanding applications including electric and hybrid vehicles, datacenters, and auxiliary power supplies. 

When compared to similarly-rated Si IGBTs, the LSIC1MO170E1000 SiC MOSFET enables a number of system level optimization opportunities, including increased efficiency, increased power density, decreased cooling requirements, and potentially lower system level costs.

Additionally, the Littelfuse SiC MOSFETs deliver on par or better performance in all aspects when compared head-to-head with other industry-leading SiC MOSFET devices on the market. 

Summary of key benefits:

Optimized for high-frequency, high-efficiency applications

Extremely low gate charge and output capacitance

Low gate resistance for high-frequency switching

Authoritative description of LSIC1MO170E1000

“This product can improve existing applications, and the Littelfuse application support network can help new design-in projects,” said Michael Ketterer, Global Product Marketing Manager, Power Semiconductors, Semiconductor Business Unit at Littelfuse.

“SiC MOSFETs offer a rewarding alternative to traditional Si-based power transistor devices. "

"The MOSFET device structure enables lower per-cycle switching losses and improved light load efficiency when compared to similarly-rated IGBTs."

"Inherent material properties allow the SiC MOSFET to outclass its Si MOSFET counterparts in terms of blocking voltage, specific on resistance, and junction capacitances.”

The market information about Littelfuse SiC MOSFETs LSIC1MO170E1000 

The new 1700V, 1 Ohm LSIC1MO170E1000 SiC MOSFETs are available in TO-247-3L packages in tubes in quantities of 450. Sample requests may be placed through authorized Littelfuse distributors worldwide.

You can buy LSIC1MO170E1000 by many  electronic components distributor.You can send inquiry to Jotrin .gain more details about LSIC1MO170E1000.


LSIC1MO170E1000 Applications
• High-frequency applications
• Solar Inverters
• Switch Mode Power Supplies
• UPSm Motor Drives
• High Voltage DC/DC Converters
• Battery Chargers
• Induction Heating


LSIC1MO170E1000  Features

• Optimized for highfrequency,high-efficiency applications
• Extremely low gate charge and output capacitance
• Low gate resistance for high-frequency switching
Normally-off operation at all temperatures

• Ultra-low on-resistance

LSIC1MO170E1000 manufacturer : Littelfuse, Inc.

LSIC1MO170E1000 DATASHEET AND PDF

 

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