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Home > Technology List > Infineon revolutionary technology _CoolSiC? MOSFET and released 1200V

Infineon revolutionary technology _CoolSiC? MOSFET and released 1200V CoolSiC Schottky Diodes

Published time: 2018-06-07

Article Guide

1.About Infineon

2.Infineon CoolSiC™ MOSFET Abstract

3.Infineon 1200V CoolSiC Schottky Diodes

4.Related Infineon products

5.Related knowledge link and product datasheet

6.What is the Schottky diode?

Reading time is about three minutes.You will learn more about infineon's CoolSiC Schottky diodes and Infineon CoolSiCTM MOSFET technology.

1.About Infineon

Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products.Infineon is the No.1 chip supplier to the automotive industry. It has carved out its memory business into a company called Qimonda in 2006.

More detailed description please visit this link

2.Infineon CoolSiC™ MOSFET Abstract

The  Infineon CoolSiC™ semiconductor solutions are the next important step towards an energy-smart world.Based on volume technology experience and compatibility know-how, Infineon introduces the revolutionary CoolSiC™ MOSFET technology which enables radically new product designs. Comparing with traditional Si based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages:These include, the lowest gate charge and device capacitance levels seen in 1200V switches, no reverse recovery losses of the anti-parallel diode, temperature independent low switching losses, and threshold-free on-state characteristics.  CoolSiC™ MOSFET represents the best performance, reliability and ease of use for system designers to harness never before seen levels of efficiency and system flexibility.

In addition,Infineon’s unique 1200V SiC MOSFET adds additional advantages. Superior gate oxide reliability enabled by state-of-the-art trench design, best in class switching and conduction losses, highest transconductance level (gain), threshold voltage of Vth = 4 V and short-circuit robustness. This is the revolution you can rely on.

All this results in a robust SiC MOSFET, ideal for hard- and resonant-switching topologies like LLC and ZVS, which can be driven like an IGBT using standard drivers. Delivering the highest level efficiency at switching frequencies unreachable by Si based switches allowing for system size reduction, power density increases and high lifetime reliability.

Infineon CoolSiC Schottky Diodes-jotrin electronics

Some Benefits and Features as follow:

  • Highest efficiency for reduced cooling effort
  • Longer lifetime and higher reliability
  • Higher frequency operation
  • Reduction in system cost
  • Increased power density
  • Reduced system complexity
  • Ease of design and implementation

Features:

Low device capacitances

Temperature independent switching losses

Intrinsic diode with low reverse recovery charge

Threshold-free on-state characteristics


From the above we have learned about Infineon's revolutionary technology. Next we will describe the specific product of Infineon CoolSiC Schottky Diodes. We will discuss his related functions and features. We will know what the Schottky Diodes are.

3.Infineon 1200V CoolSiC Schottky Diodes

Source :mouser electronics

Infineon 1200V CoolSiC Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Diodes target solar inverters, UPS, 3P SMPS, energy storage and motor drives applications. With reduction of forward voltage and temperature dependency, the diodes bring a new level of system efficiency. Moreover, an improved thermal performance compared to a silicon based solution increases system reliability and the possibility to increase output power in a given form factor. Combined with a Si HighSpeed 3 IGBT, they deliver 40% lower Si IGBT turn-on losses and reduced EMI.

According to foreign media reports, at this year's PCIM Europe exhibition in Nuremberg, Infineon launched the first automotive silicon carbide product, Schottky diode, and created a brand name - CoolSiC. This diode is designed for on-board charger (OBC) applications in hybrid and electric vehicles.

Schottky diodes, which are semiconductor components,it is based on silicon carbide,so it's more energy efficient than conventional silicon devices ,therefore it will loss lower energy. At the same time, this semiconductor components can also operate at high temperatures. As a result, they are the ideal choice for in-vehicle products, and Infineon is currently planning to push it into the automotive market.Stephan Zizala, vice president and general manager of Infineon's high-power automotive, said: "Silicon carbide (SiC) technology is currently available in large quantities and automobiles. The released of the CoolCAT family of automotive Schottky diodes,which shows it is a milestone in the development of the silicon carbide product line for Infineon . The silicon carbide product line includes automotive chargers, DC/DC converters and converter systems."

Features

Zero diode turn-off loss    Improved thermal performance and lowered static losses


2A up to 40A rated current    System efficiency improvement    

30% higher output power over Si diodes solution    High system reliability

Applications

Solar, UPS, SMPS, Storage, Motor Drives, Welding

Micro Inverter, String Inverter, PFC Stage in UPS, Vienna Rectifier in UPS

4.Related products
Attention:you can buy these product at infineon website
More information 
FF23MR12W1M1_B11 
FF11MR12W1M1_B11
DF11MR12W1M1_B11
DF23MR12W1M1_B11

FF23MR12W1M1_B11  Description

Source:infineon website

EasyDUAL™ 1B 1200 V / 23 mΩ halfbridge module with CoolSiC™ MOSFET, NTC and PressFIT Contact Technology

Summary of Features:

High current density    Best in class switching and conduction losses

Low inductive design    Integrated NTC temperature sensor

PressFIT contact technology    RoHS-compliant modules

F23MR12W1M1_B11 Benefits:

Highest efficiency for reduced cooling effort    Higher frequency operation

Increased power density     Optimized customer’s development cycle time and cost

5.Related knowledge link and product datasheet

https://www.infineon.com/dgdl/Infineon-CoolSiC_MOSFET-PB-v02_00-EN.pdf?fileId=5546d46253f650570154947f21930eef

https://www.infineon.com/dgdl/Infineon-Introduction_to_CoolSiC_1200V_SiC_MOSFET-AN-v01_00-EN.pdf?fileId=5546d462617643590161c27fbcda0aae

6. Extended reading

What is the Schottky diode?

The Schottky diode is a metal-semiconductor device in which a precious metal (gold, silver, aluminum, platinum, etc.) A is a positive electrode, an N-type semiconductor B is a negative electrode, and a barrier having a rectifying property that formed on the contact surface of the Schottky diode. Because a large number of electrons exist in the N-type semiconductor and there is only a very small amount of free electrons in the precious metal, the electrons diffuse from the high concentration B to the low concentration A. Obviously, there is no hole in metal A, and there is no diffusion movement of holes from A to B. As electrons continue to diffuse from B to A, the surface electron concentration of B gradually decreases, and the neutrality of the surface is destroyed, so that a potential barrier is formed and its electric field direction is B→A. However, under the action of this electric field, the electrons in A will also have a drifting motion from A→B, thus weakening the electric field formed by the diffusion motion. When a space charge region with a certain width is established, the electron drift motion caused by the electric field and electron diffusion motion caused by different concentrations reach a relative balance, and a Schottky barrier is formed.

A typical Schottky rectifier internal circuit structure is an N-type semiconductor substrate on which an N-epitaxial layer using arsenic as a dopant is formed. The anode uses a material such as molybdenum or aluminum to make the barrier. Silicon dioxide (SiO2) is used to eliminate the electric field in the edge area and increase the pressure resistance of the tube. The N-type substrate has a very small on-resistance, and its doping concentration is 100% higher than that of the H-layer. The N+ cathode layer is formed under the substrate, and its role is to reduce the contact resistance of the cathode. By adjusting the structural parameters, a Schottky barrier is formed between the N-type substrate and the anode metal, as shown in the figure. When a forward bias is applied across the Schottky barrier (anode metal is connected to the positive terminal of the power supply, and N-type substrate is connected to the negative terminal of the power supply), the Schottky barrier layer becomes narrower and its internal resistance becomes smaller; otherwise, if When a reverse bias is applied across the Schottky barrier, the Schottky barrier layer becomes wider and its internal resistance becomes larger.

In summary, the structural principle of the Schottky rectifier tube is very different from that of the PN junction rectifier tube. Generally, the PN junction rectifier tube is called a junction rectifier tube, and the metal-half tube rectifier tube is called a Schottky rectifier tube. An Al-Si Schottky diode fabricated using a silicon planar process has also been introduced, which not only saves precious metals, significantly reduces costs, but also improves the consistency of parameters.

The Schottky diode is a hot carrier diode. Schottky diodes are also known as Schottky barrier diodes, which are low-power, ultra-high-speed semiconductor devices. Schottky diodes are widely used in circuits such as inverters, switching power supplies, and drivers as low-voltage, high-frequency, High-current rectifier diodes, protection diodes, free-wheeling diodes, etc., Schottky diodes are used as rectifier diodes and small-signal detection diodes in microwave communications and other circuits.

 

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