5th Generation Schottky Barrier Diodes SU Series Product Launch Announcement

Shindengen Electric Manufacturing Co., Ltd. (headquartered in Otemachi, Chiyoda-ku, Tokyo, Japan) developed the 5th generation for the SU series of Schottky barrier diodes (referred to as SBD below). The 5th generation trench type structure shows significant improvements in the trade-off between VF (forward voltage) and IR (reverse current). For the initial release of the first series, we began selling the “SG40SC10U” this last September in 2010.

Features

• Using trench technology, the trade-off between VF and IR has been significantly improved. (15% improvement from our J series)VF 0.76V max. Condition: IF (forward current) = 20A; Tc (case temp.) = 25°C
• VRM(peak reverse voltage) 100V; current capacitance 40A
• TO-220 full mold (FTO-220G)    

The trade-off between VF and IR was significantly improved in the newest 5th generation SU Series that we recently developed which incorporates trench technology. y using the SU Series, the customer can expect better overall power efficiency and also a reduction in heat generation on the diodes themselves . With respect to the basic power needs, this series also contributes to a more compact, lightweight and highly-efficient product.

 

Shindengen America, Inc. (SAI) is the North American subsidiary of Shindengen Electric Manufacturing Company, Ltd. (SEM), a Tokyo-based world leader in the development and manufacture of high-quality, reliable power conversion products including power semiconductors, custom AC/DC power supplies, DC/DC converters, telecom rectifiers, automotive electronics, and solenoids.

Share:

Previous: Lite-On Technology Selected as a Member of 2012 DJSI two years in a row, ranked as the Sector Leader of Electronic Component & Equipment

Next: Thin Film MELF Resistors enable precise current measurement.