10W GaN MMIC power amplifier covers 6 to 18 GHz

Hittite Microwave Corporation announced a new Gallium Nitride (GaN) MMIC power amplifier product which offers significant performance, size and durability advantages for communications, test instrumentation and radar systems operating in the 6 to 18 GHz frequency range.

The HMC7149 is a 10W GaN MMIC Power Amplifier which operates between 6 and 18 GHz. The amplifier typically provides 20 dB of small signal gain, +40 dBm of saturated output power. The amplifier draws 680 mA quiescent current from a +28V DC supply and features RF I/Os that are matched to 50 Ohms for ease of use.

The HMC7149 GaN MMIC amplifier also offers high output power capability, a compact die size and simplified biasing, which make it ideal for integration into high power density Multi-Chip-Module (MCM) and subsystem applications.

The HMC7149 is Hittite’s fifth GaN MMIC amplifier to be released during 2013, along with the previously released 2-6 GHz, 25W HMC1086, HMC1086F10 and the 2-20 GHz, 8W HMC1087 and HMC1087F10 amplifiers. All five GaN MMIC power amplifiers complement Hittite’s extensive line of microwave power amplifiers which provide continuous frequency coverage from 0.01 to 86 GHz. For inquiries and pricing information, please contact Sales@hittite.com.  Datasheets can be requested on-line at GaN@hittite.com.

www.hittite.com

Hittite Microwave (HITT) designs and develops high performance integrated circuits, modules and subsystems for demanding RF (RF) microwave and millimeter wave applications. These applications include cellular, fiber and satellite communications, as well as medical and scientific imaging, industrial instrumentation, aerospace and defense electronics. With nearly 30 years of experience and innovative practices, Hittite has a strong presence in analog, digital and mixed-signal semiconductor technologies, ranging from device-level to complete subsystem design and assembly. Hittite Microwave was acquired and merged in 2014 by Analog Devices, Inc. (ADI).

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