TK6P60W Product Details
TK6P60W MOSFETs Silicon N-Channel MOS (DTMOS) 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.68 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.31 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature (Note 1) (Note 1) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg Rating 600 ±30 6.2 24.8 60 84 1.6 6.2 24.8 150 -55 to 150 W mJ A A Unit V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. 1/9 w w w. freescale.net.cn 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Symbol Rth(ch-c) Max 2.09 Unit /W Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25 (initial), L = 57.6 mH, RG = 25 Ω, IAR = 1.6 A Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2/9 w w w. freescale.net.cn 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance Symbol IGSS IDSS V(BR)DSS Vth RDS(ON) Test Condition VGS = ±30 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 0.31 mA VGS = 10 V, ID = 3.1 A Min 600 2.7 Typ. 0.68 Max ±1 10 3.7 0.82 Ω V Unit µA 6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified) Characteristics Input capacitance Reverse transfer capacitance Output capacitance Effective output capacitance Gate resistance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) MOSFET dv/dt ruggedness Symbol Ciss Crss Coss Co(er) rg tr ton tf toff dv/dt VDD = 0 to 400 V, ID = 3.1 A VDS = 0 to 400 V, VGS = 0 V VDS = OPEN, f = 1 MHz See Figure 6.2.1 Test Condition VDS = 300 V, VGS = 0 V, f = 1 MHz Min 25 Typ. 390 1.7 12 20 7.5 18 40 7 55 Max V/ns Ω ns Unit pF Fig. 6.2.1 Switching Time Test Circuit 6.
- Assembly bases:3.7 V
- Assembly bases:820 mΩ
- Assembly bases:390 pF
- Assembly bases:12 nC
- Drain Source voltage [VDSS]
- 600 V
- Gate Source voltage [VGSS]
- +/-30 V
- Drain current [ID]
- 6.2 A
- Power Dissipation [PD]
- 60 W
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Estimated Delivery Time: May 19 - May 24 days (choose Expedited at checkout).
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Step2: Vacuum Packaging
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
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1.We provide 90 days warranty.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
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All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment.
If there is something wrong with the TK6P60W we delivered, we will accept the replacement or return of the TK6P60W only when all of the below conditions are fulfilled:
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