SST28SF040A-90-4C-EH Product Details
The SST28SF/VF040A are 512K x8 bit CMOS SectorErase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternative approaches. The SST28SF/VF040A erase and program with a single power supply. The SST28SF/ VF040A conform to JEDEC standard pinouts for byte wide memories and are compatible with existing industry standard flash EEPROM pinouts.
Featuring high performance programming, the SST28SF/ VF040A typically Byte-Program in 35 µs. The SST28SF/ VF040A typically Sector-Erase in 2 ms. Both Program and Erase times can be optimized using interface features such as Toggle bit or Data# Polling to indicate the completion of the Write cycle. To protect against an inadvertent write, the SST28SF/VF040A have on chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST28SF/ VF040A are offered with a guaranteed sector endurance of 10,000 cycles. Data retention is rated greater than 100 years.
The SST28SF/VF040A are best suited for applications that require reprogrammable nonvolatile mass storage of program, configuration, or data memory. For all system applications, the SST28SF/VF040A significantly improve performance and reliability, while lowering power consumption when compared with floppy diskettes or EPROM approaches. Flash EEPROM technology makes possible convenient and economical updating of codes and control programs on-line. The SST28SF/VF040A improve flexibility, while lowering the cost of program and configuration storage application.
The functional block diagram shows the functional blocks of the SST28SF/VF040A. Figures 1, 2, and 3 show the pin assignments for the 32-lead PLCC, 32-lead TSOP, and 32- pin PDIP packages. Pin descriptions and operation modes are described in Tables 2 through 5.
• Single Voltage Read and Write Operations
– 5.0V-only for SST28SF040A
– 2.7-3.6V for SST28VF040A
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Memory Organization: 512K x8
• Sector-Erase Capability: 256 Bytes per Sector
• Low Power Consumption
– Active Current: 15 mA (typical) for 5.0V and 10 mA (typical) for 2.7-3.6V
– Standby Current: 5 µA (typical)
• Fast Sector-Erase/Byte-Program Operation
– Byte-Program Time: 35 µs (typical)
– Sector-Erase Time: 2 ms (typical)
– Complete Memory Rewrite: 20 sec (typical)
· Fast Read Access Time
-5.0V-only operation:90 and 120ns-2.7-3.6V operation:150 and 200ns
· Latched Address and Data
· Hardware and Software Data Protection
-7-Read-Cycle-Sequence Software Data Protection
· End-of-Write Detection
· TTL I/O Compatibility
· JEDEC Standard
-Flash EEPROM Pinouts
· Packages Available
-32-lead TSOP(8mm ×14mm and 8mmx20mm)
- Memory Size
- 4 Mbit
- 512 K x 8
- Data Retention
- 100 yr
- Maximum Operating Current
- 40 mA
- Operating Supply Voltage
- 4.5 V, 5.5 V
- Maximum Operating Temperature
- + 70 C
- Mounting Style
- Package / Case
- Access Time
- 90 ns
- Interface Type
- Minimum Operating Temperature
- 0 C
- Output Enable Access Time
- 45 ns
- Supply Voltage Max
- 5.5 V
- Supply Voltage Min
- 4.5 V
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If there is something wrong with the SST28SF040A904CEH we delivered, we will accept the replacement or return of the SST28SF040A-90-4C-EH only when all of the below conditions are fulfilled:
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