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  • NTP30N20
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NTP30N20

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Power MOSFET 30 Amps, 200 Volts N-Channel Enhancement-Mode TO-220 (30A, 200V, N-channel, enhancement-mode, TO-220 package power MOSFET) ,MOSFET 200V 30A N-Channel

  • Package/Case :
  • TO-220AB
  • Product Categories :
  • MOSFET
  • RoHs Status:
  • Rohs
  • Marking Code:
  • 30N20
  • In-stock:
  • 20000

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NTP30N20 Product Details

NTP30N20 Preferred Device Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature http://onsemi.com Typical Applications • PWM Motor Controls • Power Supplies • Converters MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to−Source Voltage (RGS = 1.0 MΩ) Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) Drain Current − Continuous @ TA 25°C − Continuous @ TA 100°C − Pulsed (Note 1) Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Range Single Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL(pk) = 20 A, L = 3.0 mH, RG = 25 Ω) Thermal Resistance − Junction−to−Case − Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS 450 °C/W RθJC RθJA TL 0.7 62.5 260 °C Value 200 200 “30 “40 Adc 30 22 90 214 1.43 −55 to +175 W W/°C °C mJ 1 Unit Vdc Vdc Vdc 30 AMPERES 200 VOLTS 68 mΩ @ VGS = 10 V (Typ) N−Channel D G S MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain 4 TO−220AB CASE 221A STYLE 5 NTP30N20 LLYWW 3 Source 2 Drain 1 Gate 2 3 1. Pulse Test: Pulse Width = 10 µs, Duty Cycle = 2%. NTP30N20 LL Y WW = Device Code = Location Code = Year = Work Week ORDERING INFORMATION Device NTP30N20 Package TO−220AB Shipping 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2003 1 December, 2003 − Rev. 4 Publication Order Number: NTP30N20/D NTP30N20 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Collector Current (VGS = 0 Vdc, VDS = 200 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = 200 Vdc, TJ = 175°C) Gate−Body Leakage Current (VGS = ± 30 Vdc, VDS = 0) ON CHARACTERISTICS Gate Threshold Voltage VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) Static Drain−to−Source On−State Resistance (VGS = 10 Vdc, ID = 15 Adc) (VGS = 10 Vdc, ID = 10 Adc) (VGS = 10 Vdc, ID = 15 Adc, TJ = 175°C) Drain−to−Source On−Voltage (VGS = 10 Vdc, ID = 30 Adc) Forward Transconductance (VDS = 15 Vdc, ID = 15 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) (VDS = 160 Vdc, VGS = 0 Vdc, f = 1.0 MHz) (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss 2335 380 148 75 − − − − pF VGS(th) 2.0 − RDS(on) ��

Technical Parameters

  • Transistor Polarity
  • N-Channel
  • Drain Source Breakdown Voltage
  • 200 V
  • Gate Source Breakdown Voltage
  • +/- 30 V
  • Continuous Drain Current
  • 30 A
  • Resistance Drain Source RDS (on)
  • 0.068 Ohms
  • Configuration
  • Single
  • Maximum Operating Temperature
  • + 175 C
  • Mounting Style
  • Through Hole
  • Package / Case
  • TO-220AB
  • Packaging
  • Tube
  • Fall Time
  • 88 ns, 24 ns
  • Forward Transconductance gFS (Max / Min)
  • 20 S
  • Minimum Operating Temperature
  • - 55 C
  • Power Dissipation
  • 214 W
  • Rise Time
  • 70 ns, 20 ns
  • Factory Pack Quantity
  • 50
  • Typical Turn Off Delay Time
  • 82 ns, 40 ns

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1.We provide 90 days warranty.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

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Q: How does Jotrin guarantee that NTP30N20 is the original manufacturer or agent of ON?
We have a professional business development department to strictly test and verify the qualifications of ON original manufacturers and agents. All ON suppliers must pass the qualification review before they can publish their NTP30N20 devices; we pay more attention to the channels and quality of NTP30N20 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.
Q: How to find the detailed information of NTP30N20 chips? Including ON original factory information, MOSFET application, NTP30N20 pictures?
You can use Jotrin's intelligent search engine, or filter by MOSFET category, or find it through ON Semiconductor, LLC Information page.
Q: Are the ON's NTP30N20 price and stock displayed on the platform accurate?
The ON's inventory fluctuates greatly and cannot be updated in time, it will be updated periodically within 24 hours. After submitting an order for NTP30N20, it is recommended to confirm the order with Jotrin salesperson or online customer service before payment.
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Q: What is the process for returns or replacement of NTP30N20?
All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the NTP30N20 we delivered, we will accept the replacement or return of the NTP30N20 only when all of the below conditions are fulfilled:
(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
(2)We are informed of the defect described above within 90 days after the delivery of NTP30N20.
(3)The NTP30N20 is unused and only in the original unpacked packaging.
Two processes to return the products:
(1)Inform us within 90 days
(2)Obtain Requesting Return Authorizations
More details about return electronic components please see our Return & Change Policy.
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