Products > Integrated Circuits (ICs) > Power Management ICs > MM912J637AV1EP
MM912J637AV1EP QFN-48
NXP
  • MM912J637AV1EP
  • MM912J637AV1EP 0
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MM912J637AV1EP

Battery Management Precision BATT SENS

Manufacturer :
NXP Semiconductor
Package/Case :
QFN-48
Product Categories :
Power Management ICs
Datasheet:
MM912J637AV1EP PDF
RoHs Status:
Rohs
In-stock:
208

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MM912J637AV1EP Product Details

The NXP® MM912J637AV1EP battery sensors are integrated battery monitoring devices that allow simultaneous measurement of current and voltage for precise determination of SOC (State of Charge), SOH (State of Health), and other parameters.

  • The integrated temperature sensor combined with the close proximity to the battery allows battery temperature measurement
  • Multiple application-specific hardware blocks reduce MCU overhead and related power consumption
  • Configurable low-power modes with automated battery state observation and sophisticated wake-up capability further reduce current consumption
  • The integrated LIN 2.1 interface allows communication and control of battery monitoring functions

Feature

  • This product is included in NXP’s product longevity program, with assured supply for a minimum of 10 years after launch
CPU Core
  • S12 microcontroller with 128kByte(J) or 96kByte(I) Flash
  • 4 kByte Data Flash
  • 6 kBytes of RAM
  • Background debug (BDM)
Standard I/O
  • 8 x MCU General Purpose I/O including SPI functionality
  • 4 x 5V GPIO including one Wake Up capable High Voltage Input (PTB3/L0)
  • 16-Bit, 4 Channel - Timer Module (TIM16B4C)
  • 8-Bit, 2 Channel - Pulse width modulation module (PWM)
Application Specific Functions
  • Battery Voltage Measurement
  • Battery Current Measurement in up to 8 ranges
  • Accurate internal oscillator (for extended accuracy an external quartz oscillator may be used)
  • Normal and 2 low-power modes
  • Communication via LIN 2.1, LIN2.0 bus interface
  • Triggered wake-up from LIN and periodic wake-up
  • Signal Low Pass Filtering (Current, Voltage)
  • PGA (programmable low-noise gain amplifier) with automatic gain control feature
  • Current threshold detection and current averaging in standby/wake-up from low-power mode
  • External Temperature Sensor Option (TSUP, VTEMP)
  • Optional 2nd external voltage sense input (VOPT)
  • On-chip temperature measurement
  • Industry standard EMC compliance

MM912J637AV1EP Block Diagram
(Picture: Diagram)

Technical Parameters

Output Voltage 2.25 V to 2.75 V Package / Case QFN-48
Output Current 65 mA Packaging Tray
Operating Supply Voltage 2.5 V, 5 V Mounting Style SMD/SMT
Maximum Operating Temperature + 125 C Product Type Charge Management
Minimum Operating Temperature - 50 C

MM912J637AV1EP Documents

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