Products > Integrated Circuits (ICs) > Memory > K8D6316UTM-PI07

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64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory

  • Package/Case :
  • TSOP-48
  • Product Categories :
  • RoHs Status:
  • Lead free/RoHS Compliant
  • In-stock:
  • 236


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K8D6316UTM-PI07 Product Details


The K8D6316U featuring single 3.0V power supply, is a 64Mbit NOR-type Flash Memory organized as 8Mx8 or 4M x16. The memory architecture of the device is designed to divide its memory arrays into 135 blocks to be protected by the block group. This block architecture provides highly flexible erase and program capability. The K8D6316U NOR Flash consists of two banks. This device is capable of reading data from one bank while programming or erasing in the other bank. Access times of 70ns, 80ns and 90ns are available for the device. The device′s fast access times allow high speed microprocessors to operate without wait states. The device performs a program operation in units of 8 bits (Byte) or 16 bits (Word) and erases in units of a block. Single or multiple blocks can be erased. The block erase operation is completed within typically 0.7 sec. The device requires 15mA as program/erase current in the standard and industrial temperature ranges. The K8D6316U NOR Flash Memory is created by using Samsung's advanced CMOS process technology. This device is available in 48 pin TSOP1 and 48 ball TBGA,FBGA packages. The device is compatible with EPROM applications to require high-density and cost-effective nonvolatile read/write storage solutions.


• Single Voltage, 2.7V to 3.6V for Read and Write operations
• Organization
  8,388,608 x 8 bit (Byte mode) / 4,194,304 x 16 bit (Word mode)
• Fast Read Access Time : 70ns
• Read While Program/Erase Operation
• Dual Bank architectures
  Bank 1 / Bank 2 : 16Mb / 48Mb
• Secode(Security Code) Block : Extra 64K Byte block
• Power Consumption (typical value @5MHz)
- Read Current : 14mA
- Program/Erase Current : 15mA
- Read While Program or Read While Erase Current : 25mA
- Standby Mode/Auto Sleep Mode : 10µA
• WP/ACC input pin
- Allows special protection of two outermost boot blocks at VIL,
  regardless of block protect status
- Removes special protection of two outermost boot block at VIH,
  the two blocks return to normal block protect status
- Program time at VHH : 9µs/word
• Erase Suspend/Resume
• Unlock Bypass Program
• Hardware RESET Pin
• Command Register Operation
• Block Group Protection / Unprotection
• Supports Common Flash Memory Interface
• Industrial Temperature : -40°C to 85°C
• Endurance : 100,000 Program/Erase Cycles Minimum
• Data Retention : 10 years
• Package : 48 Pin TSOP1 : 12 x 20 mm / 0.5 mm Pin pitch
  48 Ball TBGA : 6 x 9 mm / 0.8 mm Ball pitch
  48 Ball FBGA : 6 x 9 mm / 0.8 mm Ball pitch


K8D6316UTM-PI07 Pinout
(Picture: Pinout)

K8D6316UTM-PI07 Block Diagram
(Picture: Diagram)

Technical Parameters

  • Manufacturer
  • Packing
  • Tape & Reel (TR)/Cut Tape (CT)/Tray/Tube
  • RoHs Status
  • Lead free/RoHS Compliant
  • Package/Case
  • TSOP-48

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  • **bacu***

    Quality product, fast delivery. A real profesional !!!

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Estimated Delivery Time: Dec 12 - Dec 17 days (choose Expedited at checkout).

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1.We provide 90 days warranty.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.


Q: How does Jotrin guarantee that K8D6316UTM-PI07 is the original manufacturer or agent of SAMSUNG?
We have a professional business development department to strictly test and verify the qualifications of SAMSUNG original manufacturers and agents. All SAMSUNG suppliers must pass the qualification review before they can publish their K8D6316UTM-PI07 devices; we pay more attention to the channels and quality of K8D6316UTM-PI07 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.
Q: How to find the detailed information of K8D6316UTM-PI07 chips? Including SAMSUNG original factory information, EPROM application, K8D6316UTM-PI07 pictures?
You can use Jotrin's intelligent search engine, or filter by EPROM category, or find it through Samsung Semiconductor, Inc Information page.
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The SAMSUNG's inventory fluctuates greatly and cannot be updated in time, it will be updated periodically within 24 hours. After submitting an order for K8D6316UTM-PI07, it is recommended to confirm the order with Jotrin salesperson or online customer service before payment.
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All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the K8D6316UTMPI07 we delivered, we will accept the replacement or return of the K8D6316UTM-PI07 only when all of the below conditions are fulfilled:
(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
(2)We are informed of the defect described above within 90 days after the delivery of K8D6316UTM-PI07.
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Samsung Semiconductor, Inc

Samsung achieved and has held market leadership in DRAM and SRAM since the early 1990s, and in NAND Flash since 2003. In 2001, Samsung also signalled its long commitment to logic and analog chip development with the expansion of the System LSI Division and the opening of the SoC Research Lab....

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