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K4B4G1646D-BCK0

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DDR3 256Mx16 PC1600

Manufacturer : Samsung Semiconductor, Inc
Package/Case : BGA-96
Product Categories : DRAM ; DDR3
Datasheet: K4B4G1646D-BCK0 Datasheet (PDF)
RoHs Status: Lead free/RoHS Compliant
In-stock: 5000

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K4B4G1646D-BCK0 Product Details

Key Features

• JEDEC standard 1.5V(1.425V~1.575V)
• VDDQ = 1.5V(1.425V~1.575V)
• 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin,
  667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin,
  933MHz fCK for 1866Mb/sec/pin, 1066 MHz fCK for 2133Mb/sec/pin
• 8 Banks
• Programmable CAS Latency(posted CAS): 5,6,7,8,9,10,11,13,14
• Programmable Additive Latency: 0, CL-2 or CL-1 clock
• Programmable CAS Write Latency (CWL) = 5 (DDR3-800), 6
  (DDR3-1066), 7 (DDR3-1333) , 8 (DDR3-1600), 9 (DDR3-1866) and
  10 (DDR3-2133)
• 8-bit pre-fetch
• Burst Length: 8 , 4 with tCCD = 4 which does not allow seamless read
  or write [either On the fly using A12 or MRS]
• Bi-directional Differential Data-Strobe
• Internal(self) calibration : Internal self calibration through ZQ pin
  (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at
  85C < TCASE < 95 C
• Support Industrial Temp ( -4095C )
  - tREFI 7.8us at -40 °C ≤ TCASE ≤ 85°C
  - tREFI 3.9us at 85 °C < TCASE ≤ 95°C
• Asynchronous Reset
• Package : 96 balls FBGA - x16
• All of Lead-Free products are compliant for RoHS
• All of products are Halogen-free

The 4Gb DDR3 SDRAM D-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. The chip is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset . 

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column and bank address information in a RAS/CAS multiplexing style. The DDR3 device operates with a single 1.5V(1.425V~1.575V)power supply and 1.5V(1.425V~1.575V) VDDQ. 

4Gb DDR3 D-die device is available in 96ball FBGAs(x16).

K4B4G1646D-BCK0

Feature

  • High speed and performance
  • Low power, efficient DRAM solution

K4B4G1646D-BCK0 Products

K4B4G1646D-BCK0 Pinout
(Picture: Pinout)

Technical Parameters

  • Density
  • 4 Gb
  • Org.
  • 256M x 16
  • Speed
  • 1600 Mbps
  • Voltage
  • 1.5 V
  • Temp.
  • 0 ~ 85 °C

K4B4G1646D-BCK0 Datasheet

K4B4G1646D-BCK0 Related Products

Ratings and Reviews (2)

  • 5 / 5
  • 5 Stars 100%
  • 4 Stars 0%
  • 3 Stars 0%
  • 2 Stars 0%
  • 1 Stars 0%
  • **náci***
    2020-02-06

    High quality with very fast delivery - Thank you

  • **anue***
    2020-01-08

    excellent seller, as described

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1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

FAQ:

Q: How does Jotrin guarantee that K4B4G1646D-BCK0 is the original manufacturer or agent of SAMSUNG?
We have a professional business development department to strictly test and verify the qualifications of SAMSUNG original manufacturers and agents. All SAMSUNG suppliers must pass the qualification review before they can publish their K4B4G1646D-BCK0 devices; we pay more attention to the channels and quality of K4B4G1646D-BCK0 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.
Q: How to find the detailed information of K4B4G1646D-BCK0 chips? Including SAMSUNG original factory information, DRAM ; DDR3 application, K4B4G1646D-BCK0 pictures?
You can use Jotrin's intelligent search engine, or filter by DRAM ; DDR3 category, or find it through Samsung Semiconductor, Inc Information page.
Q: Are the SAMSUNG's K4B4G1646D-BCK0 price and stock displayed on the platform accurate?
The SAMSUNG's inventory fluctuates greatly and cannot be updated in time, it will be updated periodically within 24 hours. After submitting an order for K4B4G1646D-BCK0, it is recommended to confirm the order with Jotrin salesperson or online customer service before payment.
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Q: What is the process for returns or replacement of K4B4G1646D-BCK0?
All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the K4B4G1646DBCK0 we delivered, we will accept the replacement or return of the K4B4G1646D-BCK0 only when all of the below conditions are fulfilled:
(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
(2)We are informed of the defect described above within 90 days after the delivery of K4B4G1646D-BCK0.
(3)The K4B4G1646D-BCK0 is unused and only in the original unpacked packaging.
Two processes to return the products:
(1)Inform us within 90 days
(2)Obtain Requesting Return Authorizations
More details about return electronic components please see our Return & Change Policy.
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Samsung Semiconductor, Inc

Samsung
Samsung achieved and has held market leadership in DRAM and SRAM since the early 1990s, and in NAND Flash since 2003. In 2001, Samsung also signalled its long commitment to logic and analog chip development with the expansion of the System LSI Division and the opening of the SoC Research Lab....
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