K4B4G0846D-BYK0 Product Details
The 4Gb DDR3 SDRAM D-die is organized as a 128Mbit x 4 I/Os x 8banks, 64Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3-1866) for general applications.
The chip is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset .
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/CAS multiplexing style. The DDR3 device operates with a single 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V) power supply and 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V) VDDQ.
The 4Gb DDR3 D-die device is available in 78ball FBGAs(x4/x8).
· JEDEC standard 1.35V(1.28V~1.45V)&1.5V(1.425V~1.575V)
· V0Do =1.35V(1.28V~1.45V)&1.5V(1.425V-1.575V)
· 400 MHz fcx for 800Mb/sec/pin,533MHz fck for 1066Mb/sec/pin,
667MHz fcx for 1333Mb/sec/pin,800MHz fok for 1600Mb/sec/pin,
933MHz fcx for 1866Mb/sec/pin
· 8 Banks
· Programmable CAS Latency(posted CAS):5,6,7,8,9,10,11,12,13
· Programmable Additive Latency:0, CL-2 or CL-1 clock· Programmable CAS Write Latency (CWL)=5(DDR3-800),6
(DDR3-1066),7(DDR3-1333),8(DDR3-1600) and 9(DDR3-1866)
· 8-bit pre-fetch
· Burst Length:8(Interleave without any limit, sequential with starting address "000"only),4 with tCCD=4 which does not allow seamless read or write [ either On the fly using A12 or MRS]
· Bi-directional Differential Data-Strobe
· Internal(self) calibration: Internal self calibration through ZQ pin (RZQ:240ohm±1%)
· On Die Termination using ODT pin
· Average Refresh Period 7.8us at lower than TCASE 85C,3.9us at 85℃<TCASE≤95℃
· Support Industrial Temp(-40~95℃)
-tREFI 7.8us at -40CS TCASE ≤85℃
-tREFI 3.9us at 85C<TCASE ≤ 95℃
· Asynchronous Reset
· Package:78 balls FBGA-x4/x8
· All of Lead-Free products are compliant for RoHS
· All of products are Halogen-free
- High speed and performance
- Low power, efficient DRAM solution
(Picture:Pinout / Diagram)
- 4 Gb
- 512M x 8
- 1600 Mbps
- 1.35 V
- 0 ~ 85 °C
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- 5 / 5
- 5 Stars 100%
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A+. Quick delivery. Thanks.
Estimated Delivery Time: Oct 31 - Nov 05 days (choose Expedited at checkout).
Shipping & Payment
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- Lead Time
- $20.00-$40.00 (0.50 KG)
- 2-5 days
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- 3-7 days
- $20.00-$45.00 (0.50 KG)
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- 2-5 days
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- 5-14 days
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- $2.00-$3.00 (0.10 KG)
- 7-30 days
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Step2: Vacuum Packaging
Step3: Anti-Static Bag
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Step6: Bar-Code Shipping Tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
1.We provide 90 days warranty.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
- Q: How does Jotrin guarantee that K4B4G0846D-BYK0 is the original manufacturer or agent of SAMSUNG?
- We have a professional business development department to strictly test and verify the qualifications of SAMSUNG original manufacturers and agents. All SAMSUNG suppliers must pass the qualification review before they can publish their K4B4G0846D-BYK0 devices; we pay more attention to the channels and quality of K4B4G0846D-BYK0 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.
- Q: How to find the detailed information of K4B4G0846D-BYK0 chips? Including SAMSUNG original factory information, DRAM ; DDR3 application, K4B4G0846D-BYK0 pictures?
- You can use Jotrin's intelligent search engine, or filter by DRAM ; DDR3 category, or find it through Samsung Semiconductor, Inc Information page.
- Q: Are the SAMSUNG's K4B4G0846D-BYK0 price and stock displayed on the platform accurate?
- The SAMSUNG's inventory fluctuates greatly and cannot be updated in time, it will be updated periodically within 24 hours. After submitting an order for K4B4G0846D-BYK0, it is recommended to confirm the order with Jotrin salesperson or online customer service before payment.
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Note: It may take up to 24 hours before carriers will display tracking information. In normal conditions, Express delivery needs 3-5 days, Registered Mail needs 25-60 days.
- Q: What is the process for returns or replacement of K4B4G0846D-BYK0?
All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment.
If there is something wrong with the K4B4G0846DBYK0 we delivered, we will accept the replacement or return of the K4B4G0846D-BYK0 only when all of the below conditions are fulfilled:
(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
(2)We are informed of the defect described above within 90 days after the delivery of K4B4G0846D-BYK0.
(3)The K4B4G0846D-BYK0 is unused and only in the original unpacked packaging.
Two processes to return the products:
(1)Inform us within 90 days
(2)Obtain Requesting Return Authorizations
More details about return electronic components please see our Return & Change Policy.
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