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IRFR9024N

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Trans MOSFET P-CH Si 55V 11A 3-Pin(2+Tab) DPAK T/R

  • Package/Case :
  • TO-252-2
  • Product Categories :
  • MOSFET
  • RoHs Status:
  • Lead free / RoHS Compliant
  • In-stock:
  • 12860

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IRFR9024N Product Details

Fifth Generation HEXFETs from International Rectifier utilize advanced processing thchinques to achieve extremely low on-resistance per silicon area.

Text :

PD – 9.1506 PRELIMINARY l l l l l l l IRFR/U9024N HEXFET® Power MOSFET D Ultra Low On-Resistance P-Channel Surface Mount (IRFR9024N) Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -55V RDS(on) = 0.175Ω G S ID = -11A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D -P a k T O -2 52 A A I-P a k TO -2 5 1 A A Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. -11 -8 -44 38 0.30 ± 20 62 -6.6 3.8 -10 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)*- Junction-to-Ambient Typ. ––– ––– ––– Max. 3.3 50 110 Units °C/W 6/26/97 IRFR/U9024N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆ TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-So …

PD – 9.1506 PRELIMINARY l l l l l l l IRFR/U9024N HEXFET® Power MOSFET D Ultra Low On-Resistance P-Channel Surface Mount (IRFR9024N) Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -55V RDS(on) = 0.175Ω G S ID = -11A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D -P a k T O -2 52 A A I-P a k TO -2 5 1 A A Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. -11 -8 -44 38 0.30 ± 20 62 -6.6 3.8 -10 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)*- Junction-to-Ambient Typ. ––– ––– ––– Max. 3.3 50 110 Units °C/W 6/26/97 IRFR/U9024N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆ TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-So …

IRFR9024N

Feature

  • RoHS Compliant
  • Low RDS(on)
  • Industry-leading quality
  • Dynamic dv/dt Rating
  • Fast Switching
  • Fully Avalanche Rated
  • 175°C Operating Temperature
  • P-Channel MOSFET

IRFR9024N Products

Technical Parameters

  • Transistor Polarity
  • P-Channel
  • Drain Source Breakdown Voltage
  • 55 V
  • Gate Source Breakdown Voltage
  • +/- 20 V
  • Continuous Drain Current
  • 11 A
  • Resistance Drain Source RDS (on)
  • 175 mOhms
  • Configuration
  • Single
  • Package / Case
  • DPAK
  • Minimum Operating Temperature
  • - 55 C
  • Power Dissipation
  • 38 W
  • Typical Turn Off Delay Time
  • 23 ns

IRFR9024N Documents

IRFR9024N Related Products

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Estimated Delivery Time: May 14 - May 19 days (choose Expedited at checkout).

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We provide high quality products, thoughtful service and after sale guarantee

  • We have rich products, can meet your various needs.

    We have rich products, can meet your various needs.

  • Minimum order quantity starts from 1pcs.

    Minimum order quantity starts from 1pcs.

  • Lowest international shipping fee starts from US$2.00.

    Lowest international shipping fee starts from US$2.00.

  • 90 days quality guarantee for all products.

    90 days quality guarantee for all products.

Packing

  • Step1:Product

    Step1: Products

  • Step2:Vacuum packaging

    Step2: Vacuum Packaging

  • Step3:Anti-static bag

    Step3: Anti-Static Bag

  • Step4:Individual packaging

    Step4: Individual Packaging

  • Step5:Packaging boxes

    Step5: Packaging Boxes

  • Step6:bar-code shipping tag

    Step6: Bar-Code Shipping Tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

Jotrin ESD packing

Guarantees

1.We provide 90 days warranty.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

FAQ:

Q: How does Jotrin guarantee that IRFR9024N is the original manufacturer or agent of INFINEON?
We have a professional business development department to strictly test and verify the qualifications of INFINEON original manufacturers and agents. All INFINEON suppliers must pass the qualification review before they can publish their IRFR9024N devices; we pay more attention to the channels and quality of IRFR9024N products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.
Q: How to find the detailed information of IRFR9024N chips? Including INFINEON original factory information, MOSFET application, IRFR9024N pictures?
You can use Jotrin's intelligent search engine, or filter by Power ; MOSFET ; 12V-250V P-Channel Power MOSFET category, or find it through Infineon Technologies Corporation Information page.
Q: Are the INFINEON's IRFR9024N price and stock displayed on the platform accurate?
The INFINEON's inventory fluctuates greatly and cannot be updated in time, it will be updated periodically within 24 hours. After submitting an order for IRFR9024N, it is recommended to confirm the order with Jotrin salesperson or online customer service before payment.
Q: Can I place an order offline?
Yes. We accept offline orders.
We can provide order placement service. You only need to log in, click "My Orders" to enter the transaction management, and you will see the "Order Details" interface. After checking it, select all and click "Place Order". In addition, you can enjoy coupons or other selected gifts when placing orders online.
Q: What forms of payment can I use in Jotrin?
TT Bank, Paypal, Credit Card, Western Union, and Escrow is all acceptable.
Q: How is the shipping arranged and track my package?
Customers can choose industry-leading freight companies, including DHL, FedEx, UPS, TNT, and Registered Mail.
Once your order has been processed for shipment, our sales will send you an e-mail advising you of the shipping status and tracking number.
Note: It may take up to 24 hours before carriers will display tracking information. In normal conditions, Express delivery needs 3-5 days, Registered Mail needs 25-60 days.
Q: What is the process for returns or replacement of IRFR9024N?
All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRFR9024N we delivered, we will accept the replacement or return of the IRFR9024N only when all of the below conditions are fulfilled:
(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
(2)We are informed of the defect described above within 90 days after the delivery of IRFR9024N.
(3)The IRFR9024N is unused and only in the original unpacked packaging.
Two processes to return the products:
(1)Inform us within 90 days
(2)Obtain Requesting Return Authorizations
More details about return electronic components please see our Return & Change Policy.
Q: How to contact us and get support, such as IRFR9024N datasheet pdf, IRFR9024N pin diagram?
Need any After-Sales service, please feel free contact us: sales@jotrin.com

Infineon Technologies Corporation

Infineon
Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconducto...
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