Home > Products > Discrete Semiconductors > IRF3205

IRF3205

Hot Sale

Trans MOSFET N-CH 55V 110A 3-Pin (3+Tab) TO-220AB

Models#:
IRF3205
Manufacturer :
Package/Case :
TO-220AB
Datasheet :
IRF3205 PDF
Minimum :
1
Price:
$ 0.9000
Quantity:
Stock : 88000
Or  Send RFQ !
  • Quantity Unite Price
  • 1-9 $ 0.9000
  • 10-49 $ 0.6200
  • 50-99 $ 0.4900
  • 100-499 $ 0.4500
  • 500-1999 $ 0.4200
  • >=2000 $ 0.3950
IRF3205 TO-220AB
Images are for reference only.
Payment:
Payment
Shipping:
Shipping More
Estimated Delivery Time: Sep 24 - Sep 29 days (choose Expedited at checkout).
Manufacturer:
IR
Package/Case:
TO-220AB
Datasheet:
IRF3205 PDF
RoHS:
Lead free/RoHS Compliant

Product Details

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF3205 FEATURES ·Drain Current –ID= 110A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.008Ω(Max) Description Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 55 ±20 V V ID Drain Current-Continuous 110 A IDM Drain Current-Single Pluse 390 A PD Total Dissipation @TC=25℃ 200 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THE

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF3205 FEATURES ·Drain Current –ID= 110A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.008Ω(Max) Description Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 55 ±20 V V ID Drain Current-Continuous 110 A IDM Drain Current-Single Pluse 390 A PD Total Dissipation @TC=25℃ 200 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THE

Related Products

Popular Electronic Parts