IGBT with Anti-Parallel Diode; Package: PG-TO220-3; Switching Frequency: TRENCHSTOP™ 2-20kHz; Package: TO-220; VCE (max): 600.0 V; IC(max) @ 25°: 12.0 A; IC(max) @ 100°: 6.0 A,IGBT Transistors LOW LOSS DuoPack 600V 6A
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IKP06N60T Product Details
The 600 V, 6 A hard-switching TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
- Lowest VCEsat drop for lower conduction losses
- Low switching losses
- Easy parallel switching capability due to positive temperature coefficient in VCEsat
- Very soft, fast recovery anti-parallel Emitter Controlled Diode
- High ruggedness, temperature stable behavior
- Low EMI emissions
- Low gate charge
- Very tight parameter distribution
- Highest efficiency – low conduction and switching losses
- Comprehensive portfolio in 600 V and 1200 V for flexibility of design
- High device reliability
|Collector Emitter Voltage VCEO Max||600 V||Continuous Collector Current Ic Max||12 A|
|Maximum Gate Emitter Voltage||+/- 20 V||Minimum Operating Temperature||- 40 C|
|Maximum Operating Temperature||+ 150 C||Mounting Style||Through Hole|
|Package / Case||TO-220AB-3||Part # Aliases||IKP06N60TXK IKP06N60TXKSA1 SP000683056|
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Estimated Delivery Time: Jun 04 - Jun 09 days (choose Expedited at checkout).
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