H5GQ8H24MJR-R4C Product Details
The GDDR5 SGRAM is a high speed dynamic random-access memory designed for applications requiring high bandwidth. GDDR5 devices contain the following number of bits:
8Gb has 8,589,934,592 bits and sixteen banks
The device uses a 8n prefetch architecture and DDR interface to achieve high-speed operation. The device can be configured to operate in x32 mode or x16 (clamshell) mode. The mode is detected during device initialization. The GDDR5 interface transfers two 32 bit wide data words per WCK clock cycle to/from the I/O pins. Corresponding to the 8n-prefetch a single write or read access consists of a 256 bit wide, two CK clock cycle data transfer at the internal memory core and eight corresponding 32 bit wide one-half WCK clock cycle data transfers at the I/O pins.The GDDR5 SGRAM operates from a differential clock CK and CK#. Commands are registered at every rising edge of CK. Addresses are registered at every rising edge of CK and every rising edge of CK#.GDDR5 replaces the pulsed strobes (WDQS & RDQS) used in previous DRAMs such as GDDR4 with a free running differential forwarded clock (WCK/WCK#) with both input and output data registered and driven respectively at both edges of the forwarded WCK.Read and write accesses to the device are burst oriented; an access starts at a selected location and consists of a total of eight data words. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command and the next rising CK# edge are used to select the bank and the row to be accessed. The address bits registered coincident with the READ or WRITE command and the next rising CK# edge are used to select the bank and the column location for the burst access.
- Single ended interface for data, address and command
- Quarter data-rate differential clock inputs CK/CK# for ADD/CMD
- Two half data-rate differential clock inputs WCK/WCK#, each associated with two data bytes (DQ, DBI#, EDC)
- Double Data Rate (DDR) data (WCK)
- Single Data Rate (SDR) command (CK)
- Double Data Rate (DDR) addressing (CK)
- 16 internal banks
- 4 bank groups for tCCDL = 3 tCK and 4 tCK
- 8n prefetch architecture: 128/256 bit per array read or write access
- Burst length: 8 only
- Programmable CAS latency: 5 to 25 tCK
- Programmable WRITE latency: 1 to 7 tCK
- WRITE Data mask function via address bus (single/double byte mask)
- Data bus inversion (DBI) & address bus inversion (ABI)
- Address training: address input monitoring by DQ pins
- WCK2CK clock training with phase information by EDC pins
- Data read and write training via READ FIFO
- READ FIFO pattern preload by LDFF command
- Direct write data load to READ FIFO by WRTR command
- Consecutive read of READ FIFO by RDTR command
- Read/Write data transmission integrity secured by cyclic redundancy check (CRC-8)
- READ/WRITE EDC on/off mode
- Programmable EDC hold pattern for CDR
- Programmable CRC READ latency = 0 to 3 tCK
- Programmable CRC WRITE latency = 7 to 14 tCK
- Low Power modes
- RDQS mode on EDC pin
- Optional on-chip temparature sensor with read-out
- Auto & self refresh modes
- Auto precharge option for each burst access
- 32ms, auto refresh (16k cycles)
- Temperature sensor controlled self refresh rate
- Optional Partial Array Self Refresh (PASR)
- Optional Per-Bank Refresh (REFPB)
- On-die termination (ODT); nominal values of 60 ohm and 120 ohm
- Pseudo open drain (POD-15 or POD-135) compatible outputs (40 ohm pulldown, 60 ohm pullup)
- ODT and output drive strength auto-calibration with external resistor ZQ pin (120 ohm)
- Programmable termination and driver strength offsets
- Selectable external or internal VREF for data inputs; programmable offsets for internal VREF
- Separate external VREF for address / command inputs
- Vendor ID, FIFO depth and Density info fields for identification
- x32/x16 mode configuration set at power-up with EDC pin
- Mirror function with MF pin
- Boundary scan function with SEN pin
- 1.35V / 1.5V +/- (3%xVDD)V supply for device operation (VDD)
- 1.35V / 1.5V +/- (3%xVDDQ)V supply for I/O interface (VDDQ)
- 170 ball BGA package
- 16K Ref.
- Normal Power
- Product Status
- Mass production
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Fair price; prompt shipping. Item received as described.
Estimated Delivery Time: Dec 02 - Dec 07 days (choose Expedited at checkout).
Shipping & Payment
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- Ship Fee
- Lead Time
- $20.00-$40.00 (0.50 KG)
- 2-5 days
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- $20.00-$45.00 (0.50 KG)
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- 2-5 days
- $25.00-$45.00 (0.50 KG)
- 5-14 days
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- 7-30 days
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- charge US$30.00 banking fee.
- charge 4.0% service fee.
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We provide high quality products, thoughtful service and after sale guarantee
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90 days quality guarantee for all products.
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Step6: Bar-Code Shipping Tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
1.We provide 90 days warranty.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
- Q: How does Jotrin guarantee that H5GQ8H24MJR-R4C is the original manufacturer or agent of SKHYNIX?
- We have a professional business development department to strictly test and verify the qualifications of SKHYNIX original manufacturers and agents. All SKHYNIX suppliers must pass the qualification review before they can publish their H5GQ8H24MJR-R4C devices; we pay more attention to the channels and quality of H5GQ8H24MJR-R4C products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.
- Q: How to find the detailed information of H5GQ8H24MJR-R4C chips? Including SKHYNIX original factory information, GDDR5 SDRAM application, H5GQ8H24MJR-R4C pictures?
- You can use Jotrin's intelligent search engine, or filter by GDDR5 SDRAM category, or find it through SK HYNIX INC Information page.
- Q: Are the SKHYNIX's H5GQ8H24MJR-R4C price and stock displayed on the platform accurate?
- The SKHYNIX's inventory fluctuates greatly and cannot be updated in time, it will be updated periodically within 24 hours. After submitting an order for H5GQ8H24MJR-R4C, it is recommended to confirm the order with Jotrin salesperson or online customer service before payment.
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Yes. We accept offline orders.
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Customers can choose industry-leading freight companies, including DHL, FedEx, UPS, TNT, and Registered Mail.
Once your order has been processed for shipment, our sales will send you an e-mail advising you of the shipping status and tracking number.
Note: It may take up to 24 hours before carriers will display tracking information. In normal conditions, Express delivery needs 3-5 days, Registered Mail needs 25-60 days.
- Q: What is the process for returns or replacement of H5GQ8H24MJR-R4C?
All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment.
If there is something wrong with the H5GQ8H24MJRR4C we delivered, we will accept the replacement or return of the H5GQ8H24MJR-R4C only when all of the below conditions are fulfilled:
(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
(2)We are informed of the defect described above within 90 days after the delivery of H5GQ8H24MJR-R4C.
(3)The H5GQ8H24MJR-R4C is unused and only in the original unpacked packaging.
Two processes to return the products:
(1)Inform us within 90 days
(2)Obtain Requesting Return Authorizations
More details about return electronic components please see our Return & Change Policy.
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