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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
|Manufacturer :||International Rectifier Corp (Infineon)|
|Product Categories :||Discrete Semiconductors|
|Datasheet:||G4BC20KD Datasheet (PDF)|
|RoHs Status:||Lead free/RoHS Compliant|
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G4BC20KD Product Details
PD -91599A IRG4BC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.27V @VGE = 15V, IC = 9.0A n-ch an nel Benefits • Latest generation 4 IGBTs offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses • This part replaces the IRGBC20KD2 and IRGBC20MD2 products • For hints see design tip 97003 TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 16 9.0 32 32 7.0 32 10 ± 20 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Units V A µs V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case – IGBT Junction-to-Case – Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ––– ––– ––– ––– ––– Typ. ––– ––– 0.50 ––– 2 (0.07) Max. 2.1 3.5 ––– 80 ––– Units °C/W g (oz) w w w. irf .com 1 4/24/2000 IRG4BC20KD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown VoltageS 600 — — V Temperature Coeff. of Breakdown Voltage — 0.49 — V/°C Collector-to-Emitter Saturation Voltage — 2.27 2.8 — 3.01 — V — 2.43 — Gate Threshold Voltage 3.0 — 6.0 Temperature Coeff. of Threshold Voltage — -10 — mV/°C Forward Transconductance T 2.9 4.3 — S Zero Gate Voltage Collector Current — — 250 µA — — 1000 Diode Forward Voltage Drop — 1.4 1.7 V — 1.3 1.6 Gate-to-Emitter Leakage Current — — ±100 nA Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0mA IC = 9.0A VGE = 15V See Fig. 2, 5 IC = 16A IC = 9.0A, TJ = 150°C VCE = VGE, IC = 250µA VCE = VGE, IC = 250µA VCE = 100V, IC = 9.0A VGE = 0V, V
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1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
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All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment.
If there is something wrong with the G4BC20KD we delivered, we will accept the replacement or return of the G4BC20KD only when all of the below conditions are fulfilled:
(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
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International Rectifier Corp (Infineon)
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