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  • G23N60UFD
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G23N60UFD

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SGF23N60UFD

Manufacturer : Fairchild Semiconductor (ON Semiconductor)
Package/Case : TO-3P
Product Categories : Discrete Semiconductors
Datasheet: G23N60UFD Datasheet (PDF)
RoHs Status: Lead free/RoHS Compliant
In-stock: 459

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G23N60UFD Product Details

SGF23N60UFD SGF23N60UFD Ultra-Fast IGBT June 2001 IGBT General Description Fairchild’s Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A • High Input Impedance • CO-PAK, IGBT with FRD : trr = 42ns (typ.) Application AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls C GC E TTOO–33PPFF Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25°C @ TC = 100°C Diode Continuous Forward Current Diode Maximum Forward Current @ TC = 100°C Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25°C @ TC = 100°C Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient G E SGF23N60UFD 600 ± 20 23 12 92 12 92 75 30 -55 to +150 -55 to +150 300 Typ. —- Max. 1.6 3.0 40 Units V V A A A A A W W °C °C °C Units °C/W °C/W °C/W ©2001 Fairchild Semiconductor Corporation SGF23N60UFD Rev. A SGF23N60UFD Electrical Characteristics of IGBT TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn- On Switching Loss Turn- Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 12mA, VCE = VGE IC = 12A, VGE = 15V IC = 23A, VGE = 15V VCE = 30V, VGE = 0V, f = 1MHz VCC = 300 V, IC = 12A, RG = 23Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 12A, RG = 23Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 300 V, IC = 12A, VGE = 15V Measured 5mm from

SGF23N60UFD SGF23N60UFD Ultra-Fast IGBT June 2001 IGBT General Description Fairchild’s Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A • High Input Impedance • CO-PAK, IGBT with FRD : trr = 42ns (typ.) Application AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls C GC E TTOO–33PPFF Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25°C @ TC = 100°C Diode Continuous Forward Current Diode Maximum Forward Current @ TC = 100°C Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25°C @ TC = 100°C Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient G E SGF23N60UFD 600 ± 20 23 12 92 12 92 75 30 -55 to +150 -55 to +150 300 Typ. —- Max. 1.6 3.0 40 Units V V A A A A A W W °C °C °C Units °C/W °C/W °C/W ©2001 Fairchild Semiconductor Corporation SGF23N60UFD Rev. A SGF23N60UFD Electrical Characteristics of IGBT TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn- On Switching Loss Turn- Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 12mA, VCE = VGE IC = 12A, VGE = 15V IC = 23A, VGE = 15V VCE = 30V, VGE = 0V, f = 1MHz VCC = 300 V, IC = 12A, RG = 23Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 12A, RG = 23Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 300 V, IC = 12A, VGE = 15V Measured 5mm from

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  • RoHs Status
  • Lead free/RoHS Compliant
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  • TO-3P

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1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

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Q: How does Jotrin guarantee that G23N60UFD is the original manufacturer or agent of FAIRCHILD?
We have a professional business development department to strictly test and verify the qualifications of FAIRCHILD original manufacturers and agents. All FAIRCHILD suppliers must pass the qualification review before they can publish their G23N60UFD devices; we pay more attention to the channels and quality of G23N60UFD products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.
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You can use Jotrin's intelligent search engine, or filter by Discrete Semiconductors category, or find it through Fairchild Semiconductor (ON Semiconductor) Information page.
Q: Are the FAIRCHILD's G23N60UFD price and stock displayed on the platform accurate?
The FAIRCHILD's inventory fluctuates greatly and cannot be updated in time, it will be updated periodically within 24 hours. After submitting an order for G23N60UFD, it is recommended to confirm the order with Jotrin salesperson or online customer service before payment.
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Q: What is the process for returns or replacement of G23N60UFD?
All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the G23N60UFD we delivered, we will accept the replacement or return of the G23N60UFD only when all of the below conditions are fulfilled:
(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
(2)We are informed of the defect described above within 90 days after the delivery of G23N60UFD.
(3)The G23N60UFD is unused and only in the original unpacked packaging.
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(1)Inform us within 90 days
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More details about return electronic components please see our Return & Change Policy.
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Need any After-Sales service, please feel free contact us: sales@jotrin.com

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