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FF100R12RT4

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Trans IGBT Module N-CH 1200V 100A 555000mW 7-Pin 34MM-1 Tray

Models#:
FF100R12RT4
Manufacturer :
Package/Case :
MM-1
Datasheet :
FF100R12RT4 PDF
Minimum :
1
Quantity:
Stock : 251
  • Quantity Unite Price
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  • 10-49 $ 0.0000
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  • 500-999 $ 0.0000
  • ›=1000 $ 0.0000
FF100R12RT4 MM-1
INFINEON
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Estimated Delivery Time: Nov 22 - Nov 27 days (choose Expedited at checkout).
Manufacturer:
INFINEON
Package/Case:
MM-1
Datasheet:
FF100R12RT4 PDF

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Content
 

Parameter

Product IGBT Silicon Modules
Collector Emitter Voltage VCEO Max 1200 V
Collector Emitter Saturation Voltage 2 V
Gate Emitter Leakage Current 100 nA
Power Dissipation 555 W
Maximum Operating Temperature + 150 C
Maximum Gate Emitter Voltage 20 V
Minimum Operating Temperature - 40 C

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