50 V 800 mA NPN Silicon Switching Transistor
Manufacturer : | STMicroelectronics, Inc |
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Package/Case : | TO-92 |
Product Categories : | Bipolar Transistors |
Datasheet: | 2N2222 Datasheet (PDF) |
RoHs Status: | Lead free / RoHS Compliant |
Marking Code: | 1B |
In-stock: | 38054 |
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2N2222 Product Details
INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current- IC= 0.8A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·Complement to Type 2N2907 APPLICATIONS ·Designed for general-purpose switching and linear amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage IC Collector Current-Continuous IBM Base Current-Peak PC Collector Power Dissipation@TC=25℃ TJ Junction Temperature Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a Thermal Resistance,Junction to Ambient isc Product Specification 2N2222 VALUE 60 30 5 0.8 0.2 0.5 150 -65~150 UNIT V V V A A W ℃ ℃ MAX 350 UNIT K/W isc INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N2222 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR) CEO V(BR)EBO Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage IC=10mA ; IB=0 IE=10μA ; IC=0 VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(sat)-1 Base-Emitter Saturation Voltage VBE(sat)-2 Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= 150mA; IB= 15mA IC= 500mA; IB= 50mA IC= 150mA; IB= 15mA IC= 500mA; IB= 50mA VCB= 50V; IE=0 VEB= 5V; IC=0 hFE-1 DC Current Gain hFE-2 DC Current Gain hFE-3 DC Current Gain hFE-4 DC Current Gain hFE-5 DC Current Gain fT Current Gain-Bandwidth Product COB Output Capacitance Switching Times IC= 0.1mA ; VCE= 10V IC= 1mA ; VCE= 10V IC= 10mA ; VCE= 10V IC= 150mA ; VCE= 10V IC= 500mA ; VCE= 10V IC= 20mA ; VCE= 20V;ftest= 100MHz IE= 0 ; VCB= 10V; ftest= 1.0MHz td Delay Time tr Rise Time tstg Storage Time tf Fall Time IC= 150mA; IB1= -IB2= 15mA MIN MAX UNIT 30 V 5V 0.4 V 1.6 V 1.3 V 2.6 V 1.5 uA 50 nA 35 50 75 100 300 30 250 MHz 8 pF 10 ns 25 ns 200 ns 60 ns isc […]
Technical Parameters
- Configuration
- Single
- Transistor Polarity
- NPN
- Collector Base Voltage VCBO
- 60 V
- Collector Emitter Voltage VCEO Max
- 30 V
- Emitter Base Voltage VEBO
- 5 V
- Collector Emitter Saturation Voltage
- 1.6 V
- Maximum DC Collector Current
- 0.8 A
- Gain Bandwidth Product fT
- 250 MHz
- DC Collector/Base Gain hfe Min
- 35 at 0.1 mA at 10 V
- Maximum Operating Temperature
- + 150 C
- Mounting Style
- Through Hole
- Package / Case
- TO-18
- Continuous Collector Current
- 0.45 A
- Maximum Power Dissipation
- 0.4 W
- Minimum Operating Temperature
- - 65 C
- Packaging
- Box
- Factory Pack Quantity
- 2000
2N2222 Equivalent Parts
For the 2N2222 component, you may consider these replacement and alternative parts.
Models | Manufacturer | Package/Case | Description |
---|---|---|---|
PN2222A | FAIRCHILD | TO-92 | TRANSISTOR NPN 40V 0.6A TO-92 |
2N2222 Related Products
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FAQ:
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All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment.
If there is something wrong with the 2N2222 we delivered, we will accept the replacement or return of the 2N2222 only when all of the below conditions are fulfilled:
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STMicroelectronics, Inc
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