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2N2222

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50 V 800 mA NPN Silicon Switching Transistor

Models#:
2N2222
Manufacturer :
Package/Case :
TO-92
Datasheet :
2N2222 PDF
Minimum :
1
Price:
$ 1.9800
Quantity:
Stock : 38054
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  • Quantity Unite Price
  • 1-9 $ 1.9800
  • 10-49 $ 1.2500
  • 50-99 $ 1.1000
  • >=100 $ 0.9500
2N2222 TO-92
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Estimated Delivery Time: Nov 17 - Nov 22 days (choose Expedited at checkout).
Manufacturer:
ST
Package/Case:
TO-92
Marking Code:
1B
Datasheet:
2N2222 PDF

Product Details

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current- IC= 0.8A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·Complement to Type 2N2907 APPLICATIONS ·Designed for general-purpose switching and linear amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage IC Collector Current-Continuous IBM Base Current-Peak PC Collector Power Dissipation@TC=25℃ TJ Junction Temperature Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a Thermal Resistance,Junction to Ambient isc Product Specification 2N2222 VALUE 60 30 5 0.8 0.2 0.5 150 -65~150 UNIT V V V A A W ℃ ℃ MAX 350 UNIT K/W isc INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N2222 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR) CEO V(BR)EBO Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage IC=10mA ; IB=0 IE=10μA ; IC=0 VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(sat)-1 Base-Emitter Saturation Voltage VBE(sat)-2 Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= 150mA; IB= 15mA IC= 500mA; IB= 50mA IC= 150mA; IB= 15mA IC= 500mA; IB= 50mA VCB= 50V; IE=0 VEB= 5V; IC=0 hFE-1 DC Current Gain hFE-2 DC Current Gain hFE-3 DC Current Gain hFE-4 DC Current Gain hFE-5 DC Current Gain fT Current Gain-Bandwidth Product COB Output Capacitance Switching Times IC= 0.1mA ; VCE= 10V IC= 1mA ; VCE= 10V IC= 10mA ; VCE= 10V IC= 150mA ; VCE= 10V IC= 500mA ; VCE= 10V IC= 20mA ; VCE= 20V;ftest= 100MHz IE= 0 ; VCB= 10V; ftest= 1.0MHz td Delay Time tr Rise Time tstg Storage Time tf Fall Time IC= 150mA; IB1= -IB2= 15mA MIN MAX UNIT 30 V 5V 0.4 V 1.6 V 1.3 V 2.6 V 1.5 uA 50 nA 35 50 75 100 300 30 250 MHz 8 pF 10 ns 25 ns 200 ns 60 ns isc […]

Parameter

Configuration Single
Transistor Polarity NPN
Collector Base Voltage VCBO 60 V
Collector Emitter Voltage VCEO Max 30 V
Emitter Base Voltage VEBO 5 V
Collector Emitter Saturation Voltage 1.6 V
Maximum DC Collector Current 0.8 A
Gain Bandwidth Product fT 250 MHz
DC Collector/Base Gain hfe Min 35 at 0.1 mA at 10 V
Maximum Operating Temperature + 150 C
Mounting Style Through Hole
Package / Case TO-18
Continuous Collector Current 0.45 A
Maximum Power Dissipation 0.4 W
Minimum Operating Temperature - 65 C
Packaging Box
Factory Pack Quantity 2000

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