50 V 800 mA NPN Silicon Switching Transistor
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2N2222 Product Details
INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current- IC= 0.8A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·Complement to Type 2N2907 APPLICATIONS ·Designed for general-purpose switching and linear amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage IC Collector Current-Continuous IBM Base Current-Peak PC Collector Power Dissipation@TC=25℃ TJ Junction Temperature Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a Thermal Resistance,Junction to Ambient isc Product Specification 2N2222 VALUE 60 30 5 0.8 0.2 0.5 150 -65~150 UNIT V V V A A W ℃ ℃ MAX 350 UNIT K/W isc INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N2222 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR) CEO V(BR)EBO Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage IC=10mA ; IB=0 IE=10μA ; IC=0 VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(sat)-1 Base-Emitter Saturation Voltage VBE(sat)-2 Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= 150mA; IB= 15mA IC= 500mA; IB= 50mA IC= 150mA; IB= 15mA IC= 500mA; IB= 50mA VCB= 50V; IE=0 VEB= 5V; IC=0 hFE-1 DC Current Gain hFE-2 DC Current Gain hFE-3 DC Current Gain hFE-4 DC Current Gain hFE-5 DC Current Gain fT Current Gain-Bandwidth Product COB Output Capacitance Switching Times IC= 0.1mA ; VCE= 10V IC= 1mA ; VCE= 10V IC= 10mA ; VCE= 10V IC= 150mA ; VCE= 10V IC= 500mA ; VCE= 10V IC= 20mA ; VCE= 20V;ftest= 100MHz IE= 0 ; VCB= 10V; ftest= 1.0MHz td Delay Time tr Rise Time tstg Storage Time tf Fall Time IC= 150mA; IB1= -IB2= 15mA MIN MAX UNIT 30 V 5V 0.4 V 1.6 V 1.3 V 2.6 V 1.5 uA 50 nA 35 50 75 100 300 30 250 MHz 8 pF 10 ns 25 ns 200 ns 60 ns isc […]
|Configuration||Single||Maximum Operating Temperature||+ 150 C|
|Transistor Polarity||NPN||Mounting Style||Through Hole|
|Collector Base Voltage VCBO||60 V||Package / Case||TO-18|
|Collector Emitter Voltage VCEO Max||30 V||Continuous Collector Current||0.45 A|
|Emitter Base Voltage VEBO||5 V||Maximum Power Dissipation||0.4 W|
|Collector Emitter Saturation Voltage||1.6 V||Minimum Operating Temperature||- 65 C|
|Maximum DC Collector Current||0.8 A||Packaging||Box|
|Gain Bandwidth Product fT||250 MHz||Factory Pack Quantity||2000|
|DC Collector/Base Gain hfe Min||35 at 0.1 mA at 10 V|
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Estimated Delivery Time: Jun 06 - Jun 11 days (choose Expedited at checkout).
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