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TSDSON-8
TSDSON-8
The TSDSON-8 (Thin Shrink Small Outline No-leads 8-pin) is a surface-mount package designed for high-density circuits. Featuring a leadless design, an exposed thermal pad, and an ultra-thin profile, it delivers superior heat dissipation, minimized footprint, and enhanced electrical performance. Typical dimensions are 3.0×3.0 mm with a 0.65 mm pin pitch and 0.8 mm height, making it ideal for power management ICs, DC-DC converters, and portable devices. Its bottom-exposed thermal pad enables direct PCB thermal transfer, while RoHS-compliant materials ensure reliability in industrial environments.
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MOSFET N-CH 100V 40A TSDSON
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 8282
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MOSFET N-CH 60V 40A TSDSON
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 5016
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Discrete Semiconductor Modules
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1 + 10 + 25 + 50 + >=100 -
In-stock : 0
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TDSON N-CH 40V 19A
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 786
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TSDSON N-CH 40V 40A
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 265
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TSDSON N-CH 40V 40A
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 225
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TSDSON N-CH 40V 21A
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 33
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TSDSON N-CH 40V 40A
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 878
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TSDSON N-CH 40V 40A
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 44
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TSDSON N-CH 40V 40A
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 866
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TSDSON N-CH 40V 40A
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1 + 10 + 25 + 50 + >=100 -
In-stock : 1
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TSDSON N-CH 60V 40A
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 938
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Trans MOSFET N-CH 40V 40A Automotive 8-Pin TSDSON EP T/R
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 19034
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Infineon Technologies Corporation
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 259
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Infineon Technologies Corporation
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 2817
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Trans MOSFET N-CH 60V 40A 8-Pin TSDSON EP T/R
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 7599
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Trans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 4500
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Trans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 4500
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Trans MOSFET N-CH 60V 40A 8-Pin TSDSON EP T/R
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 400000
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Optimized for synchronous rectification
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 75
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N-Channel MOSFETs (>500V…900V); Package: PG-TO220-3; VDS (max): 900.0 V; Package: TO-220 FullPAK; RDS(ON) @ TJ=25°C VGS=10: 1,200.0 mOhm; ID(max) @ TC=25°C: 3.1 A; IDpuls (max): 10.0 A;,MOSFET COOL MOS N-CHANNEL 900V 5.1A
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 8708
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Trans MOSFET N-CH 150V 21A Automotive 8-Pin TSDSON EP T/R
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 3533
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Trans MOSFET N-CH 100V 5.3A Automotive 8-Pin TSDSON EP T/R
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 10
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Trans MOSFET N-CH 80V 6A Automotive 8-Pin TSDSON EP
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 33000
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MOSFET N-Channel 120V MOSFET
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 33000
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OptiMOSTM P3 Power-Transistor
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 55000
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MOSFET N-CH 250V 10.9A 8TSDSON
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 4222
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N-Channel MOSFETs (20V…250V); Package: PG-TSDSON-8; Package: S3O8 (3x3mm style SuperSO8); VDS (max): 40.0 V; RDS (on) (max) (@10V): 16.5 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 31.0 A;,MOSFET OptiMOS 3 PWR TRANS 40V 31A
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 33000
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N-Channel MOSFET, 40 A, 100 V OptiMOS 3, 8-Pin TSDSON Infineon
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 140
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N-Channel MOSFETs (20V…250V); Package: PG-TSDSON-8; Package: S3O8 (3x3mm style SuperSO8); VDS (max): 100.0 V; RDS (on) (max) (@10V): 16.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 40.0 A;
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 5000
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N-Channel MOSFETs (20V…250V); Package: PG-TSDSON-8; Package: S3O8 (3x3mm style SuperSO8); VDS (max): 30.0 V; RDS (on) (max) (@10V): 11.5 mOhm; RDS (on) (max) (@4.5V): 15.0 mOhm; ID (max): 35.0 A;,MOSFET OptiMOS 3 M-Series
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 86900
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N-Channel MOSFETs (20V…250V); Package: PG-TSDSON-8; Package: S3O8 (3x3mm style SuperSO8); VDS (max): 30.0 V; RDS (on) (max) (@10V): 13.0 mOhm; RDS (on) (max) (@4.5V): 17.0 mOhm; ID (max): 35.0 A;,MOSFET OptiMOS 3 M-Series
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 33000
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N-Channel MOSFETs (20V…250V); Package: PG-TSDSON-8; Package: S3O8 (3x3mm style SuperSO8); VDS (max): 80.0 V; RDS (on) (max) (@10V): 12.3 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 40.0 A;
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 20000
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MOSFET P-Channel -30V MOSFET
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 33000
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Infineon Technologies Corporation
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 10000
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MOSFET OptiMOS2 PWR Transistor N-CH
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 10000
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N-Channel MOSFETs (20V…250V); Package: PG-TSDSON-8; Package: S3O8 (3x3mm style SuperSO8); VDS (max): 40.0 V; RDS (on) (max) (@10V): 10.5 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 40.0 A;,MOSFET OptiMOS 2 PWR TRANS 40V 40A
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 86900
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N-Channel MOSFETs (20V…250V); Package: PG-TSDSON-8; Package: S3O8 (3x3mm style SuperSO8); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.1 mOhm; RDS (on) (max) (@4.5V): 11.4 mOhm; ID (max): 40.0 A;,
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 33000
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N-Channel MOSFETs (20V…250V); Package: PG-TSDSON-8; Package: S3O8 (3x3mm style SuperSO8); VDS (max): 30.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS (on) (max) (@4.5V): 15.0 mOhm; ID (max): 40.0 A;,MOSFET OptiMOS 3 M-Series
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 5000
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Trans MOSFET N-CH 40V 12A 8-Pin TSDSON EP T/R
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 100000
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Infineon Technologies Corporation
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 35800
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N-Channel MOSFETs (20V…250V); Package: PG-TSDSON-8; Package: S3O8 (3x3mm style SuperSO8); VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 9.7 mOhm; ID (max): 40.0 A;,MOSFET OptiMOS 3 M-SERIES
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 14000
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N-Channel MOSFETs (20V…250V); Package: PG-TSDSON-8; Package: S3O8 (3x3mm style SuperSO8); VDS (max): 30.0 V; RDS (on) (max) (@10V): 8.8 mOhm; RDS (on) (max) (@4.5V): 11.0 mOhm; ID (max): 40.0 A;,MOSFET OptiMOS 3 N-CH 30V 40A 8.8mOhms
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 1000
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MOSFET P-CH 30V 40A TSDSON-8
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 10000
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MOSFET P-KANAL
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 100000
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Trans MOSFET P-CH 30V 13.5A 8Pin TSDSON EP T/R
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 33000
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P-Channel MOSFETs; Package: PG-TSDSON-8; Package: S3O8 (3x3mm style SuperSO8); VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.6 mOhm; RDS (on) (max) (@4.5V): -; RDS (on) (max) (@2.5V): -;
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 100000
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MOSFET OptiMOS2 PWR Transistor N-CH
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 100000
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Power Switch ICs - Power Distribution OptiMOS2 PWR Transistor N-CH
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 125000
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N-Channel MOSFETs (20V…250V); Package: PG-TSDSON-8; Package: S3O8 (3x3mm style SuperSO8); VDS (max): 60.0 V; RDS (on) (max) (@10V): 6.7 mOhm; RDS (on) (max) (@4.5V): 12.1 mOhm; ID (max): 20.0 A;
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 53000
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Q:What defines the physical structure of TSDSON-8?
A:Key features include:
- Leadless bottom-mounted pads: Ensures stable PCB connection without protruding leads.
- Central thermal pad (80% coverage): Optimizes heat dissipation to the PCB.
- 8-pin layout with dual-row configuration: Space-efficient design for high-density layouts.
- 0.5 mm ultra-thin profile: Ideal for slim portable devices. -
Q:Why choose TSDSON-8 over alternatives?
A:Critical advantages:
- Miniaturization: 40% smaller than SOP-8, saving board space.
- Thermal Performance: Direct PCB heat path reduces junction temperature by 15°C.
- Electrical Benefits: Low-inductance design (<1 nH) for high-frequency applications.
- Reliability: Moisture-resistant substrate (MSL3 rated) for harsh environments. -
Q:What are common technical specs?
A:Standard configurations (consult datasheets):
- Body Size: 2.0 × 2.0 mm
- Height: 0.5 mm
- Pin Pitch: 0.5 mm
- Material: Copper-alloy leads with Ni/Pd/Au plating
- Temp Range: -40°C to +125°C -
Q:Where is TSDSON-8 typically applied?
A:Dominant use cases:
- Power Converters: Buck/boost ICs (e.g., TPS62130).
- RF Modules: Low-noise amplifiers (e.g., BGA2818).
- Sensor Interfaces: MEMS sensors (e.g., BME280). -
Q:What are critical assembly guidelines?
A:Key recommendations:
- PCB Design: 4×4 thermal vias under pad (0.3 mm diameter).
- Solder Paste: Type 4 solder (particle size 20–38 μm).
- Reflow Profile: Peak temp ≤ 245°C (Pb-free process).
- Inspection: X-ray (AXI) mandatory for void detection.