SOT-669
- Picture & Models
- Description
- Unite Price
- Quantity
- Operation
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N-channel 40 V, 7.6 mΩ standard level MOSFET in LFPAK56
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 1248
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Trans MOSFET N-CH 100V 30A 8-Pin SOT-1205 T/R (Alt: BUK9K29-100E/C4X)
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 1294
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N-channel 60 V, 15 mΩ logic level MOSFET in LFPAK56
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 906
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NXP PSMN0R9-25YLD MOSFET Transistor, NextPowerS3, N Channel, 300A, 25V, 0.00072Ω, 10V, 1.73V
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 1367
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Trans MOSFET N-CH 100V 25A 5Pin(4+Tab) LFPAK T/R
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 860
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Silicon N Channel Power MOS FET Power Switching
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 8696
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N-Channel MOSFET, 76 A, 60 V, 4 + Tab-Pin LFPAK Nexperia
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 520000
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N-channel LFPAK 80 V 8.5 mΩ standard level MOSFET
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 208
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N-Channel MOSFET, 89 A, 60 V, 4-Pin SOT-669 Nexperia
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 10000
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N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 750
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N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 500
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N-Channel MOSFET, 100 A, 60 V, 4-Pin SOT-669 Nexperia
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 208
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N-channel LFPAK 40 V 3.3 mΩ standard level MOSFET
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 100
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Trans MOSFET N-CH 40V 100A 5-Pin(4+Tab) LFPAK T/R
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 46500
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N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 9999
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N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 20500
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N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 17000
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N-channel TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 21.5 A; Qgd (typ): 10.1 nC; RDS(on): 102@10V mOhm; VDSmax: 200 V
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 3000
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MOSFET Transistor, N Channel, 100 A, 25 V, 0.00075 ohm, 10 V, 1.41 V
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 50000
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NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)
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1 + 10 + 25 + 50 + >=100 -
Minimum : 1 In-stock : 88662
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Q:What defines the physical structure of SOT-669?
A:Key features include:
- Leadless bottom-mounted pads for compact PCB integration.
- Central thermal pad (80% coverage) for enhanced heat dissipation.
- 6-pin layout with dual-row symmetric arrangement.
- 0.8 mm ultra-thin profile for space-constrained designs. -
Q:Why choose SOT-669 over alternatives?
A:Critical advantages:
- Miniaturization: 30% smaller than SOT-23 equivalents.
- Thermal Performance: Direct PCB heat path via thermal pad reduces junction temperature by 15%.
- Electrical Benefits: Low-inductance design (<1 nH) for high-frequency stability.
- Reliability: Moisture-resistant substrate (MSL3 rating). -
Q:What are common technical specs?
A:Standard configurations (consult datasheets):
- Body Size: 2.0 × 1.6 mm
- Height: 0.8 mm
- Pin Pitch: 0.5 mm
- Material: Copper-alloy leads with Ni/Pd/Au plating.
- Temp Range: -40°C to +125°C. -
Q:Where is SOT-669 typically applied?
A:Dominant use cases:
- Power Converters: Buck/boost ICs (e.g., TPS62130).
- RF Modules: Low-noise amplifiers (e.g., BGA2818).
- Sensor Interfaces: MEMS pressure sensors (e.g., BMP280). -
Q:What are critical assembly guidelines?
A:Key recommendations:
- PCB Design: 4×4 thermal vias under pad (0.3 mm diameter).
- Solder Paste: Type 4 solder recommended for fine-pitch printing.
- Reflow Profile: Peak temp ≤ 245°C (Pb-free process).
- Inspection: X-ray (AXI) mandatory for pad void detection.



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