IXYS Corporation Manufacturer - Jotrin Electronics

Manufacturer Introduction

Founded in 1983, IXYS Corporation (Nasdaq: IXYS) is a professional company engaging in power semiconductors, integrated circuits (IC) and RF power. IXYS has established four manufacturing facilities in Lampertheim, Germany, Chippenham, England, Beverly, MA and Fremont, CA respectively for different product lines. The factory in Lampertheim, Germany is for medium power wafer fab and automated power module, the Chippenham is for high power thyristor, the Beverly is for CMOS device and the Fremont is for GaAs FET, low noise amplifier and module. In addition, the company has established cooperation relationship with world-class foundries, including Samsung in Korea and other Asian-Pacific companies. IXYS has a broad line of products which include power devices, ICs & ASICs, RF power & systems, pulsed power systems, laser diode drivers, solar devices, microcontrollers and efficiency controllers. The company is dedicated to developing power semiconductors that effectively monitor electrical voltage to produce maximum effect with least expenditure of energy. Through years of development, IXYS has become a pioneer in the alternative and renewable energy industry. Besides, the company is striving to provide power semiconductors for equipment used in harnessing wind and solar power for conversion to the U.S. electrical power grid. What's more, the company has developed solar cells for charging portable batteries in various applications. IXYS has ranked among largest corporations in the San Francisco Chronicle's "Chron 200".

IXYS is product portfolio consists of Transistor: IGBT transistor, MOSFET transistor.

Applications

Consumer Electronics / Communication / Network

Related Technologies More

Reference design solutions offer advanced microcontroller technology 2019-12-20
IGBT module features total Current - Voltage capability of 600 Ampere and 650 Volt 2019-12-20
High-speed hard-switching 650-V IGBTs promise improved switching performance and efficiency 2019-12-20
IXYS Introduces 1.2KV X2PT IGBT E3 and SIMBUS F Power Module Series 2019-12-20
A new Design that reduces Parts and Material Costs with Higher Power Density 2019-12-20
IXYS and Clare Introduce New Optically Coupled Driver for Power MOSFETs IGBTs and Thyristors 2019-12-20
AC Solid State Relay features 5 KV isolation voltage. 2019-12-20
Dual Gate Driver ICs operate from 4.5-35 V. 2019-12-20
Gate Driver features internal pattern generator. 2019-12-20
High and Low Side Gate Driver IC has 700 V absolute max rating. 2019-12-20
Dual 1.5A MOSFET gate drivers come in small DFN package 2019-12-20
Gate driver features wide voltage range of 10V to 20V 2019-12-20
Power MOSFETs achieve current ratings from 200mA to 2A 2019-12-20
PWM-Capable LED Driver ICs suit photo flash applications. 2019-12-19
Low-Profile 3-Phase Rectifiers suit AC/DC power applications. 2019-12-19

Resources

VMM90-09F pdf
Size: 235 Kb Published Time: 2020-02-28

Features • HiPerFET TM technology – low RDSon – unclamped inductive switching (UIS) capability – dv/dt ruggedness ...

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VMM90-09F Download
Wireless Power User Guide
Size: 1187 Kb Published Time: 2020-02-28

Aninductivewirelesspower systemcoistsof a tramitter that generates a high frequency alternating magnetic field and a receiver that collects power from that field. The resonant coupled sy...

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Wireless Power Download

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